2SA1162-O,LXHF Datasheet Overview

Basic Information

•Component Number: 2SA1162-O,LXHF

•Category: Bipolar Transistor (Silicon PNP Epitaxial)

•Commercial Release Date: December 1982

•Producer: Toshiba Electronic Devices & Storage Corporation

Usage

•Low-Frequency Amplifier Circuits

•Audio Frequency General-Purpose Amplification Applications

Highlights

•AEC-Q101 compliant

•High voltage capability: VCEO = -50 V

•High collector current capacity: IC = -150 mA (maximum)

•Wide hFE range: hFE = 70 to 400

•Good hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typical)

•Low noise level: NF = 1 dB (typical), 10 dB (maximum)

•Complementary to 2SC2712

Encapsulation

•Encapsulation Style: S-MiniPin

Configuration: 1: Base, 2: Emitter, 3: Collector

Orderable Product Number

•2SA1162-O,LXHF (For Automotive Applications)

Absolute Maximum Ratings (Ta = 25°C)

Electrical Characteristics (Ta = 25°C)

Marking

•The marking details are not mentioned in the provided excerpt.

Characteristic Curves

•IC - VCE

•hFE - IC

•VCE(sat) - IC

•VBE(sat) - IC

•fT - IC

•IB - VBE

•PC - Ta (For reference only with Tj at 125°C and 150°C)

Package Dimensions

•Package Name: TOSHIBA: 2-3F1S (S-Mini)

•Weight: 12 mg (typical)

Notes

•The product is not designed for unintended applications such as nuclear facilities, aerospace industry, lifesaving medical equipment, transportation, traffic signaling, and other critical applications.

•Customers are responsible for ensuring their designs meet safety standards and minimize risk.

•Toshiba reserves the right to make changes to the product and its documentation without notice.

•For more detailed information, refer to the Toshiba Semiconductor Reliability Handbook and other relevant documentation.