Nexperia USA Inc. BAS21GW-QX

View All Single, Pre-Biased Bipolar Transistors by Nexperia USA Inc.

Part Number:
BAS21GW-QX
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
Description:
Diode 200 V 225mA Surface Mount SOD-123
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Overview

BAS21GW-QX High-Voltage Automotive Switching Diode – Full Datasheet Summary

1. Basic Device Information

Part Number: BAS21GW-QX
Device Type: High-voltage fast switching diode
Manufacturer: Nexperia
Qualification: AEC-Q101 qualified for automotive applications
Package: SOD123 (2-pin surface-mount plastic package)
Marking Code: GC
Packaging: Tape-and-reel (suffix X = reel package)
Document Version: Rev. 1, 22 April 2024
Package Dimensions: 2.675 mm × 1.6 mm × 1.15 mm

2. Core Features

Ultra-fast switching: trr ≤ 50 ns
High reverse voltage capability: VR = 200 V
Low reverse leakage current: IR ≤ 100 nA
Low junction capacitance: Cd ≤ 2 pF
Small SOD123 SMD package for high-density layouts
AEC-Q101 qualified for automotive environments
High peak forward surge current capability

3. Quick Reference Data (TJ = 25°C)

Parameter	Conditions	Min	Typ	Max	Unit
VR	Reverse voltage	–	–	200	V
VRRM	Repetitive peak reverse voltage	–	–	250	V
IF	Forward current	–	–	225	mA
IR	Reverse leakage (VR = 200 V)	–	–	100	nA
trr	Reverse recovery time	IF = 10 mA	–	–	50	ns
VF	Forward voltage (IF = 100 mA)	–	–	1	V
Cd	Diode capacitance (f = 1 MHz)	–	–	2	pF
Ptot	Total power dissipation	–	–	380	mW

4. Absolute Maximum Ratings

表格

Symbol	Parameter	Value	Unit
VR	Reverse voltage	200	V
VRRM	Repetitive peak reverse voltage	250	V
IF	DC forward current	225	mA
IFSM	Non-repetitive peak forward current (tp = 1 µs)	9	A
IFRM	Repetitive peak forward current	625	mA
Ptot	Total power dissipation	380	mW
TJ	Junction temperature	-55 to +150	°C
Tstg	Storage temperature	-65 to +150	°C

5. Thermal Characteristics

Parameter	Conditions	Value	Unit
Rth(j-a)	Junction-to-ambient (standard PCB)	330	K/W
Rth(j-a)	Junction-to-ambient (1 cm² cathode pad)	190	K/W
Rth(j-sp)	Junction-to-solder point	44	K/W

6. Pin Configuration (SOD123 Top View)

Pin	Symbol	Description
1	K	Cathode
2	A	Anode

7. Electrical Characteristics (TJ = 25°C)

Forward Voltage (VF): ≤ 1 V @ IF = 100 mA; ≤ 1.25 V @ IF = 200 mA
Reverse Leakage (IR): ≤ 100 nA @ 25°C; ≤ 100 µA @ 150°C
Reverse Recovery Time (trr): ≤ 50 ns (fast switching)
Junction Capacitance (Cd): ≤ 2 pF @ VR = 0 V, 1 MHz

8. Typical Performance Curves

Forward voltage vs. forward current (at –40°C, 25°C, 85°C, 150°C)
Reverse current vs. reverse voltage
Diode capacitance vs. reverse voltage
Peak forward current vs. pulse duration
Transient thermal impedance curves

9. Applications

Automotive high-voltage signal switching
High-speed switching circuits
General-purpose switching
Signal clamping & protection
High-frequency industrial circuits

10. Package & Soldering

Package: SOD123 (plastic SMD, 2 leads)
Compatible with reflow and wave soldering
Standard SOD123 PCB footprint recommended

11. Quality & Reliability

Fully qualified to AEC-Q101 standard for discrete semiconductors
Designed for harsh automotive temperature ranges
Stable electrical performance across extreme temperatures

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