ams OSRAM BPX 83

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  • Part Number:

    BPX 83

  • Manufacturer:

    ams OSRAM

  • Category:

    Photoelectric, Industrial

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf BPX 83_Datesheet

  • Description:

    SENSOR PHOTO 850NM TOP VIEW 6DIP

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Power - Max
90 mW
Current - Dark (Id) (Max)
50 nA
Orientation
Top View
Package / Case
6-SDIP (0.071", 1.80mm)
Viewing Angle
36°
Grade
-
Operating Temperature
-40°C ~ 80°C
Voltage - Collector Emitter Breakdown (Max)
35 V
Mounting Type
Through Hole
Qualification
-
Wavelength
850nm
Current - Collector (Ic) (Max)
50 mA
Overview

Introduction of ams OSRAM BPX 83

The Osram Sylvania BPX 80, BPX 82-89 series offers a range of NPN silicon phototransistor arrays that are specifically designed for applications requiring high linearity and sensitivity across a broad spectrum of light wavelengths, from 450 nm to 1100 nm. These phototransistor arrays are lead-free and comply with RoHS standards, making them an environmentally friendly choice for various industries.




Product Features


Broad Wavelength Range: Especially suitable for applications from 450 nm to 1100 nm, covering a wide range of wavelengths from visible light to near-infrared.

High Linearity: Ensures the accuracy and reliability of signal transmission.

Transparent Epoxy Packaging: Features a multi-digit array package, enhancing the durability and protection of the product.


Application Areas


Miniature Photointerrupters: Ideal for environments requiring precise light control.

Industrial Electronics: Plays a significant role in industrial automation and control.

Measurement/Control/Regulation: Provides stable performance in various applications requiring photoelectric conversion.


Technical Specifications


Here are some key technical specifications for the BPX 80, BPX 82-89 series:

Operating and Storage Temperature Range: -40°C to +80°C.

Collector-Emitter Voltage: 35V max.

Collector Current: 50mA max.

Collector Surge Current: 200mA (τ < 10μs).

Total Power Dissipation: Up to 90mW at an ambient temperature of 25°C.

Thermal Resistance: 750K/W.


Photoelectric Performance


Wavelength of Maximum Photo Sensitivity: 850nm.

Spectral Sensitivity Range: 450nm to 1100nm.

Radiant Sensitive Area: 0.11mm².

Chip Area Dimensions: 0.5mm × 0.5mm.

Half Angle: ±18 degrees.

Capacitance: 7.5pF at 0V and 1MHz frequency.

Dark Current: No more than 50nA at a collector-emitter voltage of 20V.


Phototransistor Array Grouping


The phototransistors in the BPX 80 and BPX 82-89 series are grouped according to their spectral sensitivity and distinguished by alphabetical characters. The minimum photocurrent (IPCEmin) for each group varies, corresponding to different photocurrent ranges:


Group -A: 0.32 to 0.63 mA

Group -B: 0.40 to 0.80 mA

Group -C: ≥0.50 mA


Packaging and Soldering Conditions


The components come in various sizes, selectable based on the number of transistors per array. Specific dimensions and soldering conditions comply with the CECC 00802 standard.


Conclusion


Osram Sylvania's BPX 80, and BPX 82-89 series of NPN silicon phototransistor arrays play an increasingly important role in the fields of industry and technology with their high performance and reliability. Choosing Osram Sylvania means choosing quality and trust. For more information, please visit JMChip Electronics.

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