BSC0921NDIATMA1 Model Information

Part Number: BSC0921NDIATMA1

Manufacturer: Infineon Technologies AG

Product Line: Dual N-Channel OptiMOS™ MOSFET

Package Type: PG-TISON-8

Marking: 0921NDI

Key Features

• Dual N-Channel OptiMOS™ MOSFET
• Optimized for High Performance Buck Converter
• Logic Level (4.5V Rated)
• N-Channel
• Qualified According to JEDEC Standards for Target Applications
• Pb-Free Lead Plating; RoHS Compliant
• Halogen-Free According to IEC61249-2-21

Maximum Ratings (at Tj = 25°C, unless otherwise specified)

• Continuous Drain Current (ID):Q1: 40 A (TC = 70°C, VGS = 10V)Q2: 40 A (TC = 70°C, VGS = 10V)Q1: 17 A (TA = 25°C, VGS = 4.5V)Q2: 31 A (TA = 25°C, VGS = 4.5V)Q1: 14 A (TA = 70°C, VGS = 4.5V)Q2: 25 A (TA = 70°C, VGS = 4.5V)Q1: 11 A (TA = 25°C, VGS = 10V)Q2: 19 A (TA = 25°C, VGS = 10V)
• Pulsed Drain Current (ID,pulse):Q1: 160 A (TC = 70°C)Q2: 160 A (TC = 70°C)
• Avalanche Energy (EAS):Q1: 12 mJ (ID = 20 A, RGS = 25 Ω)Q2: 60 mJ (ID = 20 A, RGS = 25 Ω)
• Gate-Source Voltage (VGS): ±20 V
• Power Dissipation (Ptot):Q1: 2.5 W (TA = 25°C)Q2: 2.5 W (TA = 25°C)
• Operating and Storage Temperature (Tj, Tstg): -55°C to +150°C

Thermal Characteristics

• Thermal Resistance, Junction-Case (Rθjc):Q1: 4.5 K/WQ2: 1.7 K/W
• Thermal Resistance, Junction-Ambient (Rθja):Q1: 6 cm² cooling areaQ2: 6 cm² cooling area

Electrical Characteristics (at Tj = 25°C, unless otherwise specified)

Static Characteristics

• Drain-Source Breakdown Voltage (V(BR)DSS):Q1: 30 VQ2: 30 V
• Gate Threshold Voltage (VGS(th)):Q1: 1.2 V to 2.0 VQ2: 1.2 V to 2.0 V
• Zero Gate Voltage Drain Current (IDSS):Q1: 0.1 µAQ2: 3 µA
• Gate-Source Leakage Current (IGSS):Q1: 50 nAQ2: 50 nA
• Drain-Source On-State Resistance (RDS(on)):Q1: 5.8 mΩ to 7.0 mΩ (VGS = 10 V, ID = 20 A)Q2: 1.7 mΩ to 2.1 mΩ (VGS = 10 V, ID = 20 A)Q1: 3.9 mΩ to 5.0 mΩ (VGS = 4.5 V, ID = 20 A)Q2: 1.2 mΩ to 1.6 mΩ (VGS = 4.5 V, ID = 20 A)
• Gate Resistance (Rg):Q1: 0.4 Ω to 1.4 ΩQ2: 0.3 Ω to 1.0 Ω
• Transconductance (gm):Q1: 38 S to 75 SQ2: 70 S to 140 S

Dynamic Characteristics

• Input Capacitance (Ciss):Q1: 770 pF to 1025 pFQ2: 2700 pF to 3590 pF
• Output Capacitance (Coss):Q1: 300 pF to 399 pFQ2: 1100 pF to 1463 pF
• Reverse Transfer Capacitance (Crss):Q1: 44 pFQ2: 150 pF
• Turn-On Delay Time (td(on)):Q1: 1.8 nsQ2: 5 ns
• Rise Time (tr):Q1: 3.4 nsQ2: 5.0 ns
• Turn-Off Delay Time (td(off)):Q1: 12 nsQ2: 25 ns
• Fall Time (tf):Q1: 2.4 nsQ2: 3.6 ns

Gate Charge Characteristics

• Gate to Source Charge (Qgs):Q1: 2.2 nC to 2.9 nCQ2: 6.7 nC to 8.9 nC
• Gate to Drain Charge (Qgd):Q1: 1.9 nC to 2.5 nCQ2: 7.0 nC to 9.1 nC
• Gate Charge Total (Qg):Q1: 5.9 nC to 8.9 nCQ2: 22 nC to 33 nC
• Gate Plateau Voltage (Vplateau):Q1: 2.8 VQ2: 2.5 V
• Output Charge (Qoss):Q1: 8 nC to 11 nCQ2: 30 nC to 40 nC

Reverse Diode Characteristics

• Diode Continuous Forward Current (IF):Q1: 28 AQ2: 40 A
• Diode Pulse Current (IFP):Q1: 160 AQ2: 160 A
• Diode Forward Voltage (VF):Q1: 0.9 V to 1.0 V (VGS = 0 V, IF = 20 A, Tj = 25°C)Q2: 0.56 V to 0.7 V (VGS = 0 V, IF = 8 A, Tj = 25°C)
• Reverse Recovery Charge (Qrr):Q1: 5 nCQ2: 5 nC

Package Outlines

• Package Type: PG-TISON-8
• Dimensions:A: 0.90 mm to 1.20 mmA1: 0.15 mm to 0.35 mmD: 4.80 mm to 5.35 mmD1: 0.03 mm to 0.23 mmE: 5.70 mmE1: 5.90 mm to 6.10 mm