Nexperia USA Inc. BUK7J1R0-40HX


- Part Number:
BUK7J1R0-40HX
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant - Datasheet:
BUK7J1R0-40HX_Datesheet - Description:
BUK7J1R0-40H/SOT1023/4 LEADS
- In stock 2,921
BUK7J1R0-40H 40V N‑Channel Standard Level MOSFET – Full Datasheet Summary
1. Basic Device Information
- Part Number: BUK7J1R0-40H
- Device Type: N‑channel enhancement mode power MOSFET
- Manufacturer: Nexperia
- Qualification: AEC‑Q101 qualified for automotive applications
- Technology: Trench 9 superjunction low‑ohmic
- Package: LFPAK56E (Power‑SO8, SOT1023), gull‑wing leads, copper clip
- Marking Code: 71H040E
- Document Version: Rev. 1, 10 January 2025
- Junction Temp Rating: −55°C to +175°C
2. Core Features
- AEC‑Q101 qualified, 175°C junction rating
- Ultra‑low RDS(on): 1.0 mΩ max @ VGS = 10 V, ID = 25 A
- High current density: 220 A continuous drain current
- High power dissipation: 500 W @ Tmb = 25°C
- Trench 9 superjunction for improved SOA & avalanche ruggedness
- Tight VGS(th) for easy parallel operation
- LFPAK gull‑wing leads: high board‑level reliability, visual AOI inspection
- Copper clip construction: low thermal resistance, low RDS(on), high current spreading
3. Quick Reference Data (TJ = 25°C)
| Parameter | Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|
| VDS | Drain‑source voltage | — | — | 40 | V | |
| ID | Continuous drain current | VGS = 10 V, Tmb = 25°C | — | — | 220 | A |
| IDM | Pulsed drain current (tp ≤ 10 µs) | — | — | 600 | A | |
| Ptot | Total power dissipation | Tmb = 25°C | — | — | 500 | W |
| RDS(on) | On‑state resistance | VGS = 10 V, ID = 25 A | 0.6 | 0.85 | 1.0 | mΩ |
| VGS(th) | Gate threshold voltage | ID = 1 mA, VDS = VGS | 2.4 | 3.0 | 3.6 | V |
| QG(tot) | Total gate charge | ID = 25 A, VDS = 32 V, VGS = 10 V | — | 90.7 | 131 | nC |
| EDS(AL)S | Avalanche energy | ID = 190 A, Vsup ≤ 40 V | — | — | 242 | mJ |
4. Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDS | Drain‑source voltage | 40 | V |
| VGS | Gate‑source voltage | ±20 | V |
| ID | Continuous drain current (Tmb = 25°C/100°C) | 220 | A |
| IDM | Peak drain current (tp ≤ 10 µs) | 600 | A |
| Ptot | Total power dissipation (Tmb = 25°C) | 500 | W |
| TJ | Operating junction temperature | −55 to +175 | °C |
| Tstg | Storage temperature | −55 to +175 | °C |
| IS | Source‑diode continuous current | 165 | A |
| ISM | Source‑diode peak current | 600 | A |
5. Thermal Characteristics
| Parameter | Conditions | Typ | Max | Unit |
|---|---|---|---|---|
| Rth(j‑mb) | Junction‑to‑mounting base | 0.21 | 0.3 | K/W |
| Transient thermal impedance | Pulse‑dependent | See curves | — | K/W |
6. Pin Configuration (LFPAK56E Top View)
| Pin | Symbol | Description |
|---|---|---|
| 1, 2, 3 | S | Source |
| 4 | G | Gate |
| mb | D | Drain (mounting base) |
7. Electrical Characteristics
Static
- V(BR)DSS: 40 V min @ ID = 250 µA, VGS = 0 V
- VGS(th): 2.4–3.6 V @ ID = 1 mA
- IGSS: ≤100 nA @ VGS = ±20 V
- RDS(on): 1.0 mΩ max @ 25°C; 2.18 mΩ max @ 175°C
Dynamic
- QG(tot): 90.7–131 nC; QGD: 17.7–35.5 nC
- Ciss: 6666–9340 pF; Coss: 1644–2300 pF; Crss: 309–679 pF
- td(on): 22.2 ns; tr: 18.9 ns; td(off): 51.7 ns; tf: 23.8 ns
Body Diode
- VSD: ≤1.2 V @ IS = 25 A, VGS = 0 V
- trr: 44.9 ns; Qr: 53.2 nC; S: 0.77
8. Typical Performance Curves
- Output characteristics (ID vs VDS)
- RDS(on) vs ID, VGS, and temperature
- Gate charge & capacitance curves
- Safe operating area (SOA)
- Avalanche energy vs avalanche time
- Normalized power & current vs temperature
9. Applications
- 12 V automotive power systems
- Motor, lamp, and solenoid control
- Start‑stop micro‑hybrid systems
- Transmission control
- Ultra‑high‑performance power switching
- High‑efficiency DC/DC converters
10. Package & Mechanical
- Package: LFPAK56E (Power‑SO8, SOT1023), 4 gull‑wing leads
- Pitch: 1.27 mm
- Reflow solderable; AOI inspection compatible
- Enhanced thermal performance from copper clip
11. Quality & Reliability
- Full AEC‑Q101 automotive qualification
- 175°C continuous junction operation
- High avalanche ruggedness & stability
- Robust against thermal‑cycle mechanical stress
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Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.








