Nexperia USA Inc. BUK7J1R0-40HX

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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
-
Gate Charge (Qg) (Max) @ Vgs
-
Operating Temperature
-
Power Dissipation (Max)
-
Drain to Source Voltage (Vdss)
-
Technology
-
Grade
Automotive
FET Type
-
Mounting Type
-
Package / Case
-
Rds On (Max) @ Id, Vgs
-
Qualification
AEC-Q101
Current - Continuous Drain (Id) @ 25°C
220A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Vgs(th) (Max) @ Id
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Vgs (Max)
+20V, -10V
Overview

BUK7J1R0-40H 40V N‑Channel Standard Level MOSFET – Full Datasheet Summary


1. Basic Device Information


  • Part Number: BUK7J1R0-40H
  • Device Type: N‑channel enhancement mode power MOSFET
  • Manufacturer: Nexperia
  • Qualification: AEC‑Q101 qualified for automotive applications
  • Technology: Trench 9 superjunction low‑ohmic
  • Package: LFPAK56E (Power‑SO8, SOT1023), gull‑wing leads, copper clip
  • Marking Code: 71H040E
  • Document Version: Rev. 1, 10 January 2025
  • Junction Temp Rating: −55°C to +175°C

2. Core Features


  • AEC‑Q101 qualified, 175°C junction rating
  • Ultra‑low RDS(on): 1.0 mΩ max @ VGS = 10 V, ID = 25 A
  • High current density: 220 A continuous drain current
  • High power dissipation: 500 W @ Tmb = 25°C
  • Trench 9 superjunction for improved SOA & avalanche ruggedness
  • Tight VGS(th) for easy parallel operation
  • LFPAK gull‑wing leads: high board‑level reliability, visual AOI inspection
  • Copper clip construction: low thermal resistance, low RDS(on), high current spreading

3. Quick Reference Data (TJ = 25°C)


ParameterConditionsMinTypMaxUnit
VDSDrain‑source voltage40V
IDContinuous drain currentVGS = 10 V, Tmb = 25°C220A
IDMPulsed drain current (tp ≤ 10 µs)600A
PtotTotal power dissipationTmb = 25°C500W
RDS(on)On‑state resistanceVGS = 10 V, ID = 25 A0.60.851.0
VGS(th)Gate threshold voltageID = 1 mA, VDS = VGS2.43.03.6V
QG(tot)Total gate chargeID = 25 A, VDS = 32 V, VGS = 10 V90.7131nC
EDS(AL)SAvalanche energyID = 190 A, Vsup ≤ 40 V242mJ

4. Absolute Maximum Ratings


SymbolParameterValueUnit
VDSDrain‑source voltage40V
VGSGate‑source voltage±20V
IDContinuous drain current (Tmb = 25°C/100°C)220A
IDMPeak drain current (tp ≤ 10 µs)600A
PtotTotal power dissipation (Tmb = 25°C)500W
TJOperating junction temperature−55 to +175°C
TstgStorage temperature−55 to +175°C
ISSource‑diode continuous current165A
ISMSource‑diode peak current600A

5. Thermal Characteristics


ParameterConditionsTypMaxUnit
Rth(j‑mb)Junction‑to‑mounting base0.210.3K/W
Transient thermal impedancePulse‑dependentSee curvesK/W

6. Pin Configuration (LFPAK56E Top View)

PinSymbolDescription
1, 2, 3SSource
4GGate
mbDDrain (mounting base)

7. Electrical Characteristics


Static


  • V(BR)DSS: 40 V min @ ID = 250 µA, VGS = 0 V
  • VGS(th): 2.4–3.6 V @ ID = 1 mA
  • IGSS: ≤100 nA @ VGS = ±20 V
  • RDS(on): 1.0 mΩ max @ 25°C; 2.18 mΩ max @ 175°C

Dynamic


  • QG(tot): 90.7–131 nC; QGD: 17.7–35.5 nC
  • Ciss: 6666–9340 pF; Coss: 1644–2300 pF; Crss: 309–679 pF
  • td(on): 22.2 ns; tr: 18.9 ns; td(off): 51.7 ns; tf: 23.8 ns

Body Diode


  • VSD: ≤1.2 V @ IS = 25 A, VGS = 0 V
  • trr: 44.9 ns; Qr: 53.2 nC; S: 0.77

8. Typical Performance Curves


  • Output characteristics (ID vs VDS)
  • RDS(on) vs ID, VGS, and temperature
  • Gate charge & capacitance curves
  • Safe operating area (SOA)
  • Avalanche energy vs avalanche time
  • Normalized power & current vs temperature

9. Applications


  • 12 V automotive power systems
  • Motor, lamp, and solenoid control
  • Start‑stop micro‑hybrid systems
  • Transmission control
  • Ultra‑high‑performance power switching
  • High‑efficiency DC/DC converters

10. Package & Mechanical


  • Package: LFPAK56E (Power‑SO8, SOT1023), 4 gull‑wing leads
  • Pitch: 1.27 mm
  • Reflow solderable; AOI inspection compatible
  • Enhanced thermal performance from copper clip

11. Quality & Reliability


  • Full AEC‑Q101 automotive qualification
  • 175°C continuous junction operation
  • High avalanche ruggedness & stability
  • Robust against thermal‑cycle mechanical stress


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