BYTe Semiconductor BY25Q64ASHIG(R)

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  • Part Number:

    BY25Q64ASHIG(R)

  • Manufacturer:

    BYTe Semiconductor

  • Category:

    Memory

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf BY25Q64ASHIG(R)_Datesheet

  • Description:

    64 MBIT, 3.0V (2.7V TO 3.6V), -4

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Grade
-
Voltage - Supply
2.7V ~ 3.6V
Memory Organization
8M x 8
Supplier Device Package
8-USON (4x3)
Memory Size
64Mbit
Memory Format
FLASH
Technology
FLASH - NOR (SLC)
Write Cycle Time - Word, Page
50µs, 2.4ms
Access Time
7 ns
Qualification
-
Clock Frequency
108 MHz
Operating Temperature
-40°C ~ 85°C (TA)
Package / Case
8-XDFN Exposed Pad
Memory Type
Non-Volatile
Memory Interface
SPI - Quad I/O
Mounting Type
Surface Mount
Overview

DESCRIPTION



· The BY25Q64AS is a 64Mbit Serial NOR Flash Memory.

· It supports standard SPI, Dual SPI, and Quad SPI modes.

· The device operates on a single 2.7V to 3.6V power supply.

· It features a high-speed clock frequency up to 104MHz.



FEATURES



· 64Mbit memory organized in 8192 programmable pages.

· Supports flexible erase options: Sector, Block, and Chip Erase.

· Integrated write protection and security features.

· Low power consumption with deep power-down mode.



APPLICATIONS



· Ideal for code storage in embedded systems.

· Suitable for data logging and parameter storage.

· Used in consumer electronics and industrial applications.

· Applicable in automotive systems for firmware updates.



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