BYTe Semiconductor BY25Q64ASWIG(R)

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  • Part Number:

    BY25Q64ASWIG(R)

  • Manufacturer:

    BYTe Semiconductor

  • Category:

    Memory

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf BY25Q64ASWIG(R)_Datesheet

  • Description:

    64 MBIT, 3.0V (2.7V TO 3.6V), -4

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Clock Frequency
108 MHz
Mounting Type
Surface Mount
Technology
FLASH - NOR (SLC)
Voltage - Supply
2.7V ~ 3.6V
Package / Case
8-WDFN Exposed Pad
Memory Size
64Mbit
Operating Temperature
-40°C ~ 85°C (TA)
Write Cycle Time - Word, Page
50µs, 2.4ms
Supplier Device Package
8-WSON (5x6)
Access Time
7 ns
Memory Format
FLASH
Memory Organization
8M x 8
Grade
-
Memory Type
Non-Volatile
Qualification
-
Memory Interface
SPI - Quad I/O
Overview

DESCRIPTION

· The BY25Q64AS is a 64M-bit Serial NOR Flash memory device.

· It supports standard SPI, Dual SPI, and Quad SPI interfaces.

· The device operates with a single 2.7V to 3.6V power supply.



FEATURES

· 64M-bit memory organized in 8192 programmable pages of 256 bytes each.

· Supports clock frequencies up to 104MHz in Fast Read mode.

· Built-in 4KB uniform sector erase and 32KB/64KB block erase functions.

· Hardware and software write protection features.

· More than 100,000 erase/program cycles and 20-year data retention.



APPLICATIONS

· Embedded systems requiring non-volatile memory storage.

· Consumer electronics such as TVs, set-top boxes, and digital cameras.

· Networking equipment including routers and switches.

· Industrial control systems and automotive electronics.



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