Name: GCMS040B120S1-E1
Brand: SemiQ
SKU: JM-GCMS040B120S1-E1
Availability: InStock

SemiQ GCMS040B120S1-E1

View All Single FETs, MOSFETs by SemiQ

Part Number:
GCMS040B120S1-E1
Manufacturer:
SemiQ
Category:
Single FETs, MOSFETs
RoHs:
RoHS Compliant
Datasheet:
GCMS040B120S1-E1_Datesheet
Description:
SIC 1200V 40M MOSFET & 15A SBD S
In stock 87

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Specifications

Type

Paramete

Type

Paramete

Qualification

Technology

SiC (Silicon Carbide Junction Transistor)

Grade

Mounting Type

Chassis Mount

Vgs(th) (Max) @ Id

4V @ 10mA

Drain to Source Voltage (Vdss)

1200 V

Drive Voltage (Max Rds On, Min Rds On)

20V

FET Feature

Power Dissipation (Max)

242W (Tc)

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

3110 pF @ 1000 V

FET Type

N-Channel

Package / Case

SOT-227-4, miniBLOC

Current - Continuous Drain (Id) @ 25°C

57A (Tc)

Gate Charge (Qg) (Max) @ Vgs

124 nC @ 20 V

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

52mOhm @ 40A, 20V

Supplier Device Package

SOT-227

Overview

DESCRIPTION

· High-speed switching SiC MOSFETs with integrated freewheeling SiC SBD featuring zero reverse recovery.
· Kelvin reference for enhanced operational stability.
· Designed for low switching losses and low junction-to-case thermal resistance.
· Rugged construction with easy mounting capabilities.
· Supports direct mounting to heatsink in an isolated package.
· Maintains lower Qrr at elevated temperatures.

FEATURES

· Maximum continuous current (ISD) for parallel SBD and MOSFET body diode, considering maximum Rth JC of SBD.
· Pulse width limited by TJmax.
· High drain-source voltage capability up to 1200V.
· Simple drive requirements with gate-source voltage range of -10V to 25V.
· Operating and storage temperature range from -55°C to 175°C.
· Power dissipation up to 242W at TC=25°C.

APPLICATIONS

· Photovoltaic inverters.
· Battery charging systems.
· Server power supplies.
· Energy storage systems.

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