SemiQ GCMX005A120B3B1P


- Part Number:
GCMX005A120B3B1P
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant
- Datasheet:
GCMX005A120B3B1P_Datesheet
- Description:
SIC 1200V 5M MOSFET HALF-BRIDGE
- In stock 6
DESCRIPTION
· High-speed switching SiC MOSFETs with reliable body diode
· All components tested above 1350V
· Low switching losses and low junction-to-case thermal resistance
· Rugged design with easy mounting and direct heatsink attachment (isolated package)
FEATURES
· Continuous body diode drain current: 300A
· Continuous drain current range: -40 to 150°C
· Power dissipation: 1154W at TC=25°C, TJ=175°C
· Maximum junction temperature: 175°C
· Pulsed drain current: 700A
· Drain-source voltage: 1200V
· On-resistance (RDS,on): 4.4mΩ
· Kelvin reference for stable operation
· Press-fit terminal connections
APPLICATIONS
· Photovoltaic inverters
· Battery chargers
· Energy storage systems
· High-voltage DC-to-DC converters
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