Name: GCMX010A120B2B1P
Brand: SemiQ
SKU: JM-GCMX010A120B2B1P
Availability: InStock

SemiQ GCMX010A120B2B1P

View All FET, MOSFET Arrays by SemiQ

Part Number:
GCMX010A120B2B1P
Manufacturer:
SemiQ
Category:
FET, MOSFET Arrays
RoHs:
RoHS Compliant
Datasheet:
GCMX010A120B2B1P_Datesheet
Description:
SIC 1200V 10M MOSFET HALF-BRIDGE
In stock 10

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Specifications

Type

Paramete

Type

Paramete

Technology

Silicon Carbide (SiC)

Rds On (Max) @ Id, Vgs

12mOhm @ 100A, 20V

Input Capacitance (Ciss) (Max) @ Vds

13100pF @ 800V

Mounting Type

Chassis Mount

Supplier Device Package

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Operating Temperature

-40°C ~ 175°C (TJ)

FET Feature

Configuration

2 N-Channel (Half Bridge)

Grade

Qualification

Gate Charge (Qg) (Max) @ Vgs

476nC @ 20V

Power - Max

750W (Tc)

Package / Case

Module

Vgs(th) (Max) @ Id

4V @ 40mA

Current - Continuous Drain (Id) @ 25°C

214A (Tc)

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