Name: GCMX080A120B2H1P
Brand: SemiQ
SKU: JM-GCMX080A120B2H1P
Availability: InStock

SemiQ GCMX080A120B2H1P

View All FET, MOSFET Arrays by SemiQ

Part Number:
GCMX080A120B2H1P
Manufacturer:
SemiQ
Category:
FET, MOSFET Arrays
RoHs:
RoHS Compliant
Datasheet:
GCMX080A120B2H1P_Datesheet
Description:
SIC 1200V 80M MOSFET FULL-BRIDGE
In stock 29

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Specifications

Type

Paramete

Type

Paramete

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Vgs(th) (Max) @ Id

4V @ 10mA

Operating Temperature

-40°C ~ 175°C (TJ)

Gate Charge (Qg) (Max) @ Vgs

56nC @ 20V

Grade

Power - Max

119W (Tc)

Technology

Silicon Carbide (SiC)

Package / Case

Module

FET Feature

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Input Capacitance (Ciss) (Max) @ Vds

1362pF @ 800V

Qualification

Supplier Device Package

Rds On (Max) @ Id, Vgs

100mOhm @ 20A, 20V

Mounting Type

Chassis Mount

Configuration

4 N-Channel (Full Bridge)

Overview

DESCRIPTION

· High-speed switching SiC MOSFETs with reliable body diode.
· All components tested above 1350V.
· Features low switching losses and low junction-to-case thermal resistance.
· Designed for ruggedness and easy mounting, including direct mounting to heatsink (isolated package).

FEATURES

· Kelvin reference for stable operation.
· Maximum junction temperature (TJ,max) of 175°C.
· Pulsed drain current of 80A.
· Gate-source voltage range of -10V to 25V.
· Drain-source voltage of 1200V.
· On-resistance (RDS,on) of 77 mΩ.
· Power dissipation of 119W at TC=25°C, TJ=175°C.
· Continuous drain current of 33A.
· Operating and storage temperature range from -40°C to 175°C.

APPLICATIONS

· Photovoltaic Inverter.
· Battery charger.
· Energy storage system.
· High voltage DC to DC converter.
· Press fit terminal connections.

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