Microchip Technology ICPB2002-1-110I

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  • Part Number:

    ICPB2002-1-110I

  • Manufacturer:

    Microchip Technology

  • Category:

    RF FETs, MOSFETs

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf ICPB2002-1-110I_Datesheet

  • Description:

    DC-12 GHZ 12W DISCRETE GAN HEMT

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Current - Test
125 mA
Frequency
12GHz
Noise Figure
-
Gain
10dB
Power - Output
12W
Package / Case
Die
Voltage - Test
28 V
Technology
GaN HEMT
Mounting Type
Surface Mount
Supplier Device Package
Die
Voltage - Rated
28 V
Qualification
-
Grade
-
Configuration
-
Current Rating (Amps)
1A
Overview

DESCRIPTION



· The ICPB2002 is a GaN on SiC discrete HEMT designed for operation from DC to 12GHz in both pulsed and CW modes. It is optimized for power and efficiency using field plate technology.



FEATURES



· Frequency Range: DC -12GHz
· Nominal P 3dB: 41.5dBm
· Maximum PAE at 6GHz: 65%
· Drain Bias: 28V
· Technology: GaN on SiC
· Lead-free and RoHS compliant
· Chip Dimensions: 0.81 x 1.14 x 0.10mm



APPLICATIONS



· Aerospace & Defense
· Broadband Wireless



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