Infineon Technologies IRLZ34NL

View All Single, Pre-Biased Bipolar Transistors by Infineon Technologies

Part Number:
IRLZ34NL
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
IRLZ34NL_Datesheet
Description:
MOSFET N-CH 55V 30A TO262
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Specifications

Type

Paramete

Type

Paramete

Vgs (Max)

±16V

Package / Case

TO-262-3 Long Leads, I2PAK, TO-262AA

Rds On (Max) @ Id, Vgs

35mOhm @ 16A, 10V

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Mounting Type

Through Hole

Qualification

Input Capacitance (Ciss) (Max) @ Vds

880 pF @ 25 V

Vgs(th) (Max) @ Id

2V @ 250µA

Drain to Source Voltage (Vdss)

55 V

FET Type

N-Channel

Grade

Gate Charge (Qg) (Max) @ Vgs

25 nC @ 5 V

Power Dissipation (Max)

3.8W (Ta), 68W (Tc)

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Supplier Device Package

TO-262

Technology

MOSFET (Metal Oxide)

FET Feature

Operating Temperature

-55°C ~ 175°C (TJ)

Overview

PRODUCT SPECIFICATION SUMMARY

Infineon HEXFET Power MOSFET - Part Number: IRLZ34NL

1. PART NUMBER DECODING

Code Segment	Value	Description
IR	International Rectifier	Manufacturer identifier
L	Logic Level	Optimized for low gate drive voltage (4.5V)
Z	Z-Series	HEXFET technology family
34	Model number	Specific device identifier
N	N-Channel	Channel type
L	Lead-Free	RoHS compliant, lead-free TO-262 package

2. PRODUCT OVERVIEW

Type: HEXFET N-Channel Power MOSFET
Package: TO-262 (D²PAK Through-Hole)
Technology: Logic-Level Gate Drive
Status: Active production

Key Features

Logic-level gate drive (fully enhanced at 4.5V Vgs)
Low on-resistance: 40 mΩ max at 10V gate drive
High current capability: 27A continuous current
Fast switching: Suitable for high-frequency applications
Avalanche energy rated: Single-pulse avalanche energy rated for robust operation
Lead-free and RoHS compliant

Typical Applications

DC motor drives and servo control
Power supplies: SMPS, DC-DC converters
Automotive systems: Engine management, body electronics
Lighting: LED drivers, HID ballasts
Load switching: Solenoids, relays, power distribution
Battery management systems

3. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless specified)

Parameter	Symbol	Value	Unit
Drain-to-Source Voltage	V(BR)DSS	55	V
Continuous Drain Current (@ VGS=10V, TC=100°C)	ID	27	A
Continuous Drain Current (@ VGS=10V, TC=25°C)	ID	19	A
Pulsed Drain Current (t = 20µs)	IDM	110	A
Gate-to-Source Voltage	VGS	±16	V
Single Pulse Avalanche Energy (L=0.38mH, IAS=16A)	EAS	48	mJ
Repetitive Avalanche Energy	EAR	8.3	mJ
Power Dissipation (TC = 25°C)	PD	68	W
Linear Derating Factor	-	0.45	W/°C
Operating Junction Temperature	TJ	-55 to +175	°C
Storage Temperature Range	TSTG	-55 to +175	°C

4. ELECTRICAL SPECIFICATIONS (TC = 25°C unless specified)

Static Characteristics

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = 250µA	55	-	-	V
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250µA	1.0	-	2.0	V
Static Drain-Source On-Resistance	RDS(on)	VGS = 10V, ID = 27A	-	-	0.040	Ω
Static Drain-Source On-Resistance	RDS(on)	VGS = 4.5V, ID = 13A	-	-	0.045	Ω
Static Drain-Source On-Resistance	RDS(on)	VGS = 4.0V, ID = 13A	-	-	0.055	Ω
Gate-Body Leakage Current	IGSS	VDS = 0V, VGS = ±16V	-	-	±100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 55V, VGS = 0V, TJ = 25°C	-	-	1	µA
Zero Gate Voltage Drain Current	IDSS	VDS = 55V, VGS = 0V, TJ = 125°C	-	-	20	µA
Forward Transconductance	gFS	VDS = 25V, ID = 16A	-	25	-	S

5. THERMAL CHARACTERISTICS

Parameter	Symbol	Value	Unit
Thermal Resistance, Junction-to-Case	RθJC	2.2	°C/W
Thermal Resistance, Junction-to-Ambient	RθJA	50	°C/W
Maximum Lead Temperature for Soldering	TL	300 (for 10s)	°C

6. DYNAMIC CHARACTERISTICS (TC = 25°C)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Input Capacitance	Ciss	VDS = 25V, VGS = 0V, f = 1.0MHz	-	880	-	pF
Output Capacitance	Coss	VDS = 25V, VGS = 0V, f = 1.0MHz	-	120	-	pF
Reverse Transfer Capacitance	Crss	VDS = 25V, VGS = 0V, f = 1.0MHz	-	85	-	pF

7. SWITCHING CHARACTERISTICS (TC = 25°C, resistive load)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Turn-On Delay Time	td(on)	VDD = 28V, ID = 16A, RG = 4.7Ω, VGS = 10V	-	10	-	ns
Rise Time	tr	VDD = 28V, ID = 16A, RG = 4.7Ω, VGS = 10V	-	36	-	ns
Turn-Off Delay Time	td(off)	VDD = 28V, ID = 16A, RG = 4.7Ω, VGS = 10V	-	25	-	ns
Fall Time	tf	VDD = 28V, ID = 16A, RG = 4.7Ω, VGS = 10V	-	24	-	ns
Total Gate Charge	Qg	VDD = 44V, ID = 16A, VGS = 10V	-	39	50	nC
Threshold Gate Charge	Qgs	VDD = 44V, ID = 16A, VGS = 10V	-	6.8	-	nC
Plateau Gate Charge	Qgd	VDD = 44V, ID = 16A, VGS = 10V	-	13	-	nC

8. BODY DIODE CHARACTERISTICS

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Source-Drain Diode Voltage	VSD	IS = 16A, VGS = 0V, TJ = 25°C	-	-	1.3	V
Reverse Recovery Time	trr	IF = 16A, di/dt = 100A/µs	-	85	-	ns
Reverse Recovery Charge	Qrr	IF = 16A, di/dt = 100A/µs	-	180	-	nC
Forward Diode Current	ISD	-	-	-	27	A

9. TYPICAL PERFORMANCE CHARACTERISTICS

On-Resistance vs. Temperature

Rds(on) increases approximately 40% from 25°C to 125°C
Normalized Rds(on) at 175°C: ~1.6× the value at 25°C

Safe Operating Area (SOA)

Current limited by Rds(on): At low VDS
Power dissipation limited: Moderate VDS region
Avalanche energy limited: High voltage region
Thermal limited: Continuous operation boundary

Capacitance Characteristics

Ciss: Decreases with increasing VDS (from ~2500pF at 1V to ~200pF at 50V)
Coss: Decreases significantly with VDS
Crss: Strongly voltage-dependent, affects switching speed

Gate Charge

Total gate charge: 39nC typical at VGS=10V
Plateau voltage: ~5V (critical for driver design)
Miller charge (Qgd): 13nC (affects switching losses)

10. PACKAGE INFORMATION

TO-262 (D²PAK Through-Hole) Dimensions

Dimension	Min	Max	Unit
Overall Length	10.70	10.90	mm
Overall Width	4.52	4.72	mm
Overall Height	4.10 (at flange)	-	mm
Lead Width	0.55	0.75	mm
Lead Thickness	0.40	0.60	mm
Lead Pitch	2.21	2.59	mm
Mounting Hole Diameter	3.90	4.10	mm

Package Marking

Line 1: International Rectifier Logo
Line 2: Part Number (e.g., IRLZ34N)
Line 3: Date Code (Year/Week)
Line 4: Assembly Line Code
Lead-Free Indicator: "P" in assembly line position

11. ORDERING INFORMATION

Part Number	Package	Description	Lead-Free Status
IRLZ34NL	TO-262	HEXFET N-Channel MOSFET	Lead-Free (RoHS)
IRLZ34NS	TO-263 (D²PAK SMD)	Same die, surface mount	Lead-Free (RoHS) Note: The "L" suffix indicates TO-262 through-hole package. "S" suffix indicates TO-263 surface mount package.

12. SOLDERING & MOUNTING RECOMMENDATIONS

Through-Hole Mounting (TO-262)

Mounting Screw: M3 or #4-40, torque 0.5-0.8 Nm
Heat Sink: Recommended for PD > 5W
Thermal Interface: Thermal grease or pad, 0.05mm max thickness
Soldering: Wave soldering at 260°C max for 10 seconds
Lead Forming: Bend at minimum 1.5mm from package body

Thermal Management

RθJC: 2.2°C/W (junction-to-case)
RθCS: 0.5-1.0°C/W typical (case-to-sink, with thermal interface)
RθSA: Dependent on heatsink selecti

13. GATE DRIVE REQUIREMENTS

Minimum Drive Voltage

Fully enhanced: VGS ≥ 4.5V for logic-level operation
Standard drive: VGS = 10V for lowest Rds(on)
Maximum: VGS ≤ 16V (absolute max)

Drive Power Calculation

Gate drive power: Pdrive = Qg × VGS × fsw
Example: At fsw=100kHz, VGS=10V → Pdrive = 39nC × 10V × 100kHz = 39mW
Average gate current: Ig = Qg × fsw = 3.9mA at 100kHz

Driver Output Impedance

Recommended: RG (external) + driver Rout should be ≤10Ω for fast switching
Switching loss optimization: Balance between speed and EMI with gate resistor

14. RELIABILITY & QUALITY

Qualification Standards

AEC-Q101: Qualified for automotive applications
JEDEC: Compliant with J-STD-020, JESD51 standards
Moisture Sensitivity: MSL Level 1 (unlimited floor life)

Avalanche Ruggedness

Single-pulse avalanche energy: 48mJ (L=0.38mH, IAS=16A)
Repetitive avalanche: 8.3mJ rated
Unclamped inductive switching: Device can survive specified energy levels

Typical Failure Modes

Electrical overstress: Exceeding VDS, VGS ratings
Thermal runaway: Inadequate heatsinking
Avalanche failure: Exceeding energy ratings

15. ENVIRONMENTAL COMPLIANCE

RoHS Directive: Fully compliant (2011/65/EU)
REACH: SVHC-free, compliant with EC 1907/2006
Halogen-Free: Meets IEC 61249-2-21 standard
Conflict Minerals: Compliant with Dodd-Frank Act Section 1502
Green Packaging: Halogen-free mold compound

16. COMPARISON WITH RELATED PARTS

Part Number	Package	VDS	ID	Rds(on) @ 10V	Logic Level	Notes
IRLZ34NL	TO-262	55V	27A	40mΩ	Yes	Through-hole
IRLZ34NS	TO-263	55V	27A	40mΩ	Yes	Surface mount
IRLZ44NL	TO-262	55V	47A	22mΩ	Yes	Higher current
IRF540N	TO-220	100V	28A	44mΩ	No	Standard gate drive

17. DESIGN CONSIDERATIONS

Parallel Operation

Gate resistors: Use individual gate resistors (4.7Ω-10Ω) for each device
Current sharing: Match Rds(on) and thermal conditions
Oscillation prevention: Minimize gate driver loop inductance

Protection Circuits

Gate protection: Zener diode (16V) recommended for VGS clamping
Overcurrent: Fast-acting fuse or current limiting
Overvoltage: TVS diode for inductive load clamping
ESD: Handle with proper ESD precautions (HBM Class 2)

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