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IXYS IXTU1N80P
- Part Number:
IXTU1N80P
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
- Description:
MOSFET N-CH TO251
- In stock 0
IXTU1N80P – 800V 1A N‑Channel Enhancement‑Mode Power MOSFET (Full Datasheet Summary)
1. Basic Information
- Manufacturer: IXYS (Littelfuse)
- Document: Preliminary Technical Information, DS100112A (June 2017)
- Device Type: N‑channel enhancement‑mode power MOSFET
- Package: TO‑251 (through‑hole plastic package)
- Key Specs: VDSS = 800 V, ID25 = 1 A, RDS(on) ≤ 14 Ω
- Marking: PolarTM series, avalanche rated
- Applications: DC‑DC converters, SMPS, motor drives, laser discharge, ignition circuits, high‑voltage pulse power
2. Key Features
- Avalanche‑energy rated (EAS = 75 mJ)
- Low gate charge (QG) for fast switching
- Low package inductance
- Fast intrinsic body diode
- Industry‑standard through‑hole package
- High power density
3. Absolute Maximum Ratings (TC = 25 °C, unless noted)
表格
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain‑source voltage (TJ = 25–150 °C) | VDSS | 800 | V |
| Drain‑gate voltage (RGS = 1 MΩ) | VDGR | 800 | V |
| Gate‑source voltage (continuous) | VGSS | ±30 | V |
| Gate‑source voltage (transient) | VGSM | ±40 | V |
| DC drain current | ID25 | 1 | A |
| Peak drain current (pulse‑limited) | IDM | 2 | A |
| Avalanche current | IA | 1 | A |
| Avalanche energy | EAS | 75 | mJ |
| Drain‑source dv/dt | dv/dt | 5 | V/ns |
| Total power dissipation | PD | 42 | W |
| Junction / operating temperature | TJ, Tamb | −55 … +150 | °C |
| Storage temperature | Tstg | −55 … +150 | °C |
| Lead soldering temp (10 s, 1.6 mm from case) | TSOLD | 260 | °C |
| Max lead temp | TL | 300 | °C |
| Mounting force (TO‑251) | FC | 10–65 N | — |
| Weight | — | 0.40 | g |
4. Electrical Characteristics (TJ = 25 °C, unless noted)
Off Characteristics
表格
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain‑source breakdown voltage | BVDSS | VGS = 0 V, ID = 250 μA | 800 | — | — | V |
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 50 μA | 2.0 | — | 4.0 | V |
| Gate‑source leakage | IGSS | VGS = ±30 V, VDS = 0 V | — | — | ±100 | nA |
| Drain‑source leakage | IDSS | VDS = VDSS, VGS = 0 V | — | — | 3 | μA |
| TJ = 125 °C | — | — | 30 | μA |
On Characteristics
表格
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain‑source on‑resistance | RDS(on) | VGS = 10 V, ID = 0.5 A | — | 10 | 14 | Ω |
| Forward transconductance | gfs | VDS = 20 V, ID = 0.5 A | 0.30 | — | 0.55 | S |
Dynamic Characteristics
表格
| Parameter | Symbol | Conditions | Typ | Unit |
|---|---|---|---|---|
| Input capacitance | Ciss | VDS = 25 V, VGS = 0 V, f = 1 MHz | 250 | pF |
| Output capacitance | Coss | — | 58 | pF |
| Reverse transfer capacitance | Crss | — | 5.3 | pF |
| Total gate charge | Qg | VGS = 10 V, VDS = 400 V, ID = 0.5 A | 9.0 | nC |
| Gate‑source charge | Qgs | — | 1.4 | nC |
| Gate‑drain charge | Qgd | — | 5.5 | nC |
Switching Times (VGS = 10 V, RG = 50 Ω)
表格
| Parameter | Symbol | Typ | Unit |
|---|---|---|---|
| Turn‑on delay | td(on) | 22 | ns |
| Rise time | tr | 20 | ns |
| Turn‑off delay | td(off) | 18 | ns |
| Fall time | tf | 42 | ns |
Intrinsic Diode
表格
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Continuous source current | IS | VGS = 0 V | 1 | A |
| Peak source current | ISM | — | 4 | A |
| Diode forward voltage | VSD | IF = 1 A | 1.3 | V |
| Reverse recovery time | trr | IF = 1 A, −di/dt = 100 A/μs | 700 | ns |
5. Thermal Characteristics
表格
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Thermal resistance, junction‑to‑case | RthJC | — | °C/W |
| Thermal resistance, case‑to‑sink | RthCS | — | °C/W |
6. Pin Configuration (TO‑251, Top View)
表格
| Pin | Label | Function | Notes |
|---|---|---|---|
| 1 | G | Gate | — |
| 2 | D | Drain | Tab = Drain |
| 3 | S | Source | — |
7. Package Outline (TO‑251)
- Format: Through‑hole plastic package
- Dimensions: Provided in inches + millimeters (standard TO‑251 form factor)
- Mounting: Standard through‑hole PCB assembly
8. Important Notes
- Preliminary data; specifications subject to change
- Avalanche rated for robust inductive switching
- Do not exceed absolute maximum ratings
- Follow proper ESD handling
- Not recommended for life‑support or safety‑critical systems without full qualification
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