Samsung K4T1G164QJ-BCE7

View All Display Drivers by Samsung

Part Number:
K4T1G164QJ-BCE7
Manufacturer:
Samsung
Category:
Display Drivers
RoHs:
Non-RoHS Compliant
Datasheet:
Description:
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBG
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Overview

K4T1G164QJ-BCE7 Complete Component Specification Sheet

1. Basic Device Identification

Manufacturer: Samsung Semiconductor Inc.Samsung Semiconductor Global
Full Part Number: K4T1G164QJ-BCE7
Product Category: DRAM Memory IC
Memory Type: DDR2 SDRAM (Double Data Rate 2 Synchronous DRAM)Samsung Semiconductor Global
Part Lifecycle: EOL (End of Life) / Discontinued
RoHS Compliance: RoHS Compliant (Lead-free & Halogen-free)
ECCN: EAR99
Moisture Sensitivity Level (MSL): Level 3 (168 hours)
HTS Code: 8542.32.00.28 (US) / 8542329010 (CN)

2. Memory Density & Organization

Parameter	Value
Total Density	1 Gbit (128 MBytes)Samsung Semiconductor Global
Memory Organization	64M × 16-bit (64 Meg words × 16 bits per word)Samsung Semiconductor Global
Number of Internal Banks	8 banksdownload.semiconductor.samsung.com
Data Bus Width	16 bitsSamsung Semiconductor Global
Architecture	4n-prefetch DDR2 core architecture

3. Electrical Specifications

3.1 Power Supply

Nominal Supply Voltage (VDD/VDDQ/VDDL): 1.8 Vdownload.semiconductor.samsung.com
Operating Voltage Range: 1.7 V – 1.9 V
Voltage Tolerance: ±0.1 Vdownload.semiconductor.samsung.com
Reference Voltage (VREF): 0.9 V (VDD/2)download.semiconductor.samsung.com

3.2 Timing & Speed Grade

Max Clock Frequency (fCK): 533 MHzSamsung Semiconductor Global
Data Transfer Rate: 1066 MT/s (DDR2-1066)Samsung Semiconductor Global
Cycle Time (tCK): 1.875 ns
CAS Latency (CL): Programmable (3, 4, 5, 6)
Additive Latency (AL): Programmable (0, 1, 2, 3, 4, 5)
Write Latency (WL): RL – 1 (Read Latency minus 1)
Access Time (tAC): Max 0.4 ns (400 ps)

3.3 Current Consumption

Operating Current (IDD0): Typical 180 mA
Self-Refresh Current (IDD6): Low-power self-refresh mode supported
Power-Down Current (IDD2P): Ultra-low power standby

4. Package & Mechanical Data

Parameter	Value
Package Type	84-pin FBGA (Fine-Pitch Ball Grid Array)Samsung Semiconductor Global
Package Code	84-FBGA
Mounting Style	Surface Mount (SMT)
Package Dimensions	13 mm × 9 mm × 1.2 mm
Ball Pitch	0.8 mm (800 µm)
Lead/Ball Material**: Pb-free (RoHS-compliant)
Weight**: Approx. 0.2 g

5. Environmental Operating Conditions

Operating Temperature Range (TC): 0°C to +85°C (Commercial Grade)Samsung Semiconductor Global
Storage Temperature Range: -55°C to +125°C
Reflow Soldering Peak Temperature: Max 260°C (per J-STD-020)

6. Key Functional Features

4n-prefetch architecture for high-bandwidth DDR2 operation
Differential bidirectional data strobe (DQS) for precise data capture
Posted CAS with programmable additive latency for improved efficiency
On-Die Termination (ODT) for signal integrity (50Ω impedance)
Off-Chip Driver (OCD) impedance calibration for robust signal quality
Programmable burst lengths: 4, 8 (interleave/sequential modes)
Auto-Refresh (AR) and Self-Refresh (SR) with temperature-compensated refresh rate
8-bank interleaving for maximum memory throughputdownload.semiconductor.samsung.com
Power-down and deep power-down modes for low-power applications
3-state output drivers for multi-device bus sharing

7. Part Number Decoding (K4T1G164QJ-BCE7)

K: Samsung memory IC prefix
4: DRAM product family
T: DDR2 SDRAM type
1G: 1 Gbit total density
16: 16-bit data bus width
4: Organization code (64M × 16)
QJ: Die revision (J-die)download.semiconductor.samsung.com
-: Separator
B: Speed grade identifier
CE: Package & temperature code (84-FBGA, Commercial 0°C~+85°C)Samsung Semiconductor Global
7: Device revision/version code

8. Typical Target Applications

Legacy desktop and laptop computers
Networking equipment (routers, switches, access points)
Industrial control systems and automation
Consumer electronics (set-top boxes, digital TVs, printers)
Embedded computing platforms
Legacy server and data center equipment
Automotive infotainment systems (non-AEC-Q100 grade)

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