Micron MT25QL128ABA1ESE-0SIT – 128Mb 3V Multiple I/O Serial Flash Memory Full Attachment Summary

1. Basic Identification

• Manufacturer: Micron Technology, Inc.
• Part Number: MT25QL128ABA1ESE-0SIT
• Device Type: 128Mb (16MB) 3V Multiple I/O Serial NOR Flash Memory
• Voltage Grade: L = 2.7–3.6V
• Temperature Grade: IT = Industrial (–40°C to +85°C)
• Package: SE = 8‑pin SOP2, 208 mils body width (SO8W)
• Pin Option: 1 = HOLD# pin only
• Sector Size: E = 64KB main sectors + 4KB / 32KB subsectors
• Security: 0 = Standard default security
• Special Option: S = Standard (non‑automotive)
• Revision: Rev. K (04/19)
• Compliance: RoHS, halogen‑free, JEDEC JESD47H

2. Key Features

• SPI‑compatible serial interface; supports STR/DTR
• Clock frequency: up to 133 MHz (STR), 90 MHz (DTR)
• Dual/Quad I/O for throughput up to 90 MB/s
• Execute‑in‑place (XIP) mode
• PROGRAM / ERASE SUSPEND & RESUME
• Volatile & nonvolatile configuration registers
• Software & hardware RESET (dedicated pin on selected parts)
• 64‑byte dedicated OTP area (user‑lockable, permanent lock)
• Flexible erase: bulk, 64KB sector, 32KB / 4KB subsector
• Advanced security: sector lock (volatile/nonvolatile), password protection, hardware write protect, CRC data integrity
• JEDEC 3‑byte ID: 20h BA18h
• Endurance: 100k erase cycles per sector; Data retention: 20 years

3. Memory Organization

• Density: 128Mb = 16,777,216 bytes
• Sector Structure: 256 × 64KB sectors
• Subsector: 512 × 32KB; 4096 × 4KB
• Page Size: 256 bytes (page program)
• Addressing: 3‑byte address (A23–A0)
• Memory Map: 000000h to FFFFFFh

4. Speed & AC Timing

• Clock Frequency:
• Page Program Time (tPP): typ 120 µs, max 1800 µs
• 4KB Subsector Erase (tSSE): typ 50 ms, max 400 ms
• 32KB Subsector Erase (tSSE): typ 100 ms, max 1 s
• 64KB Sector Erase (tSE): typ 150 ms, max 1 s
• Bulk Erase (tBE): typ 38 s, max 114 s
• CRC Check Time (full chip): typ 0.5 s
• Program/Erase Suspend Latency:

5. Electrical Specifications

Recommended Operating Conditions

• VCC: 2.7V – 3.6V
• Operating temp (IT): –40°C to +85°C
• Storage temp: –65°C to +150°C

DC Characteristics

• Standby current (ICC1): max 50 µA
• Deep power‑down current (ICC2): max 30 µA
• Read operating current (ICC3): max 16–22 mA (133 MHz)
• Program/erase current (ICC4/5/6): max 35 mA
• Input leakage: ±2 µA
• Output low voltage (VOL): max 0.4V @ 1.6mA
• Output high voltage (VOH): min VCC – 0.2V @ –100µA

Absolute Maximum Ratings

• VCC: –0.3V to 4.0V
• I/O voltage: –0.3V to VCC + 0.6V
• ESD (HBM): ±2000V

6. Supported Protocols & Commands

• Protocols: Extended‑SPI, Dual‑SPI, Quad‑SPI (STR/DTR)
• Core Commands:

7. Security & Protection

• Block protection (BP[3:0], TB)
• Volatile & nonvolatile sector lock bits
• Global freeze bit for lock protection
• Password protection (64‑bit)
• Status register write protection (SRWD + W#)
• CRC for data integrity detection
• Power‑up write protection

8. Package & Mechanical

• Package Type: 8‑pin SOP2 (SO8W), 208 mils
• Code: SE
• Interface: S#, C, DQ0, DQ1, DQ2, DQ3, W#, HOLD#
• Solder Ball: SAC302
• RoHS compliant

9. Power Modes

• Active: Selected (S# LOW)
• Standby: Deselected, no operation (ICC1)
• Deep Power‑Down: Lowest power (ICC2); entered via B9h

10. Reliability

• Minimum 100,000 erase/program cycles per sector
• Data retention: 20 years at +85°C
• JESD47H compliant