Micron Technology Inc. MT41K256M16TW-107IT:P

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  • Part Number:

    MT41K256M16TW-107IT:P

  • Manufacturer:

    Micron Technology Inc.

  • Category:

    Memory

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

  • Description:

    The Micron MT41K256M16TW-107IT:P is a high-performance industrial-grade DDR3L SDRAM offering a balanced combination of speed, density, and power efficiency.

  • In stock 0
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Overview

Technical Datasheet: MT41K256M16TW-107IT:P DDR3L SDRAM


1. Basic Product Information

ItemDetails
ManufacturerMicron Technology, Inc.
Part NumberMT41K256M16TW-107IT:P
Memory TypeDDR3L SDRAM (Low Voltage DDR3)
Density4Gbit (256M × 16-bit organization)
Data Interface16-bit parallel bus
Package96-ball Fine-Pitch Ball Grid Array (FBGA)
Package Dimensions8mm × 14mm
Mounting TypeSurface Mount Technology (SMT)
Lifecycle StatusActive (Production)
FBGA CodeD9SHG

2. Key Electrical & Performance Specifications


2.1 Voltage & Timing Parameters

ParameterValue
Operating Voltage1.283V – 1.45V (Typical: 1.35V)
Max Clock Frequency933 MHz (DDR3-1866 data rate)Micron Technology
Data Access Time20 ns
CAS Latency (CL)7 (15 ns)
tRCD (Row to Column Delay)15 ns
tRP (Row Precharge Time)15 ns
Architecture8n-prefetch, multi-bank interleaving

2.2 Temperature & Reliability


ParameterValue
Operating Temperature-40°C to +95°C (Industrial Grade, IT)
Junction Temperature-40°C to +95°C
Moisture Sensitivity LevelMSL 3 (168 hours floor life)
AEC-Q100 QualificationNot Applicable (Industrial grade only, not automotive AIT)

3. Package & Mechanical Characteristics

ParameterDetails
Package Type96-ball FBGA (Fine-Pitch BGA)
Form Factor8.0 mm × 14.0 mm
Package Height1.10 mm
Number of Pins96
Thermal PerformanceEnhanced heat dissipation via multiple solder balls
Parasitic CharacteristicsLow inductance & capacitance for high-frequency signal integrity

4. Core Features & Functional Advantages


  • Low-Voltage Operation (1.35V): Reduces power consumption and thermal dissipation compared to standard 1.5V DDR3
  • On-Die Termination (ODT): Improves signal integrity and noise immunity in high-speed designs
  • Programmable Latencies: Supports configurable CAS read/write latency (CL, CWL) and additive latency (AL)
  • Self-Refresh Modes: Automatic Self-Refresh (ASR) and Self-Refresh Temperature (SRT) for low-power operation
  • Write Leveling: Ensures proper data strobe alignment across multiple memory devices
  • Multi-Bank Architecture: Enables concurrent data access and parallel processing for higher throughput
  • JEDEC Compliance: Fully compatible with DDR3L industry standards for broad interoperabilityMicron Technology

5. Compliance & Regulatory Certifications


ComplianceStatus
RoHS 3.0Fully CompliantMicron Technology
REACHCompliant
ECCN ClassificationEAR99 (No export restrictions)
SVHCNo Substances of Very High Concern
China RoHSCertifiedMicron Technology

6. Target Applications


  • Industrial Control Systems: PLCs, factory automation, remote monitoring equipment
  • Networking Infrastructure: Switches, routers, packet buffering modules
  • Embedded Computing: FPGA baseboards, industrial single-board computers
  • Medical Devices: Patient monitoring, diagnostic equipment
  • Telecommunications: Base station controllers, data transmission modules
  • Automotive Non-Safety Systems: Infotainment, telematics (non-AEC-Q100 applications)

7. Design & Integration Considerations


7.1 PCB Design Guidelines


  • Optimize stackup and trace routing to minimize impedance discontinuities
  • Implement proper decoupling capacitors near power pins to suppress switching noise
  • Use differential signaling for clock and data strobe signals
  • Maintain consistent trace lengths for data bus lanes to minimize skew

7.2 Thermal Management


  • Ensure adequate PCB copper area for heat dissipation
  • Consider thermal vias under the FBGA package for enhanced cooling
  • Monitor operating temperature in high-density environments

7.3 Supply Chain & Sourcing


  • Active production status with long-term availability
  • Compatible with standard DDR3L memory controllers
  • Multi-sourcing options available from Micron's MT41K family and other vendors

8. Equivalent & Replacement Models


8.1 Key Matching Criteria for Alternatives


  • 4Gbit DDR3L SDRAM with 256M × 16-bit organization
  • 96-ball FBGA package (8mm × 14mm)
  • Industrial temperature range (-40°C to +95°C)
  • 933 MHz clock frequency (-107 speed grade)
  • 1.35V low-voltage operation

8.2 Recommended Replacement Options


  • Micron MT41K256M16TW-107IT:PTR (Tape & Reel packaging)
  • Samsung K4B4G1646E-BCMA (Industrial grade DDR3L)
  • SK hynix H5TC4G63CFR-PBA (Industrial temperature DDR3L)

8.3 Validation Requirements


  • Cross-verify timing parameters (CL, tRCD, tRP) across vendors
  • Perform signal integrity and thermal testing after replacement
  • Validate initialization sequences and ODT configurations
  • Conduct full temperature range testing for industrial applications

9. Conclusion

The Micron MT41K256M16TW-107IT:P is a high-performance industrial-grade DDR3L SDRAM offering a balanced combination of speed, density, and power efficiency. Its 1.35V low-voltage design, 933MHz operation, and -40°C to +95°C temperature range make it ideal for demanding industrial, networking, and embedded applications. The standardized 96-ball FBGA package and JEDEC compliance ensure broad compatibility and ease of integration, while comprehensive regulatory certifications support global deployment. This memory device provides reliable performance in harsh environments and offers a robust solution for systems requiring stable operation over extended temperature ranges.


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