Micron Technology Inc. MT41K512M16VRP-107 AIT:P

View All Memory by Micron Technology Inc.

Part Number:
MT41K512M16VRP-107 AIT:P
Manufacturer:
Micron Technology Inc.
Category:
Memory
RoHs:
Non-RoHS Compliant
Datasheet:
Description:
SDRAM - DDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 96-FBGA (8x14)
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Overview

MT41K512M16VRP-107 AIT:P Component Information

1. Basic Identification

Manufacturer: Micron Technology
Part Number: MT41K512M16VRP-107 AIT:P
Product Category: DRAM (Dynamic Random Access Memory)
DRAM Type: DDR3L SDRAM (Low Voltage Double Data Rate 3 Synchronous DRAM)
Part Status: Active
RoHS Compliance: Compliant (EU RoHS 2011/65/EU, 2015/863)
ECCN: EAR99
HTS Code: 8542.32.00.36

2. Memory Organization & Density

表格

Parameter	Value
Total Memory Density	8 Gbit (1 GB)
Memory Organization	512M x 16-bit (512 Meg words × 16 bits per word)
Number of Internal Banks	8 banks
Words per Bank	64M
Data Bus Width	16 bits
Address Bus Width	19 bits
Architecture	TwinDie (two 4Gb x8 die in one package)

3. Electrical Characteristics

3.1 Voltage

Nominal Supply Voltage (VDD/VDDQ): 1.35 V
Operating Voltage Range: 1.283 V to 1.45 V
Backward Compatibility: Supports 1.5 V ±0.075 V operation

3.2 Timing & Speed

Maximum Clock Frequency: 933 MHz
Data Transfer Rate: 1866 MT/s (Double Data Rate)
Cycle Time: 1.07 ns (at CL=13, DDR3-1866)
CAS Latency (CL): Programmable (9, 10, 11, 13)
Access Time: 13.91 ns (typical)

3.3 Current Consumption

Operating Current (Typical): 58 mA
Refresh Current (Typical): 30 mA
Maximum Operating Current: 88 mA

4. Package & Mechanical Specifications

表格

Parameter	Value
Package Type	TFBGA (Thin Fine-Pitch Ball Grid Array)
Package Code	96-FBGA (8 mm × 14 mm)
Pin Count	96 balls
Lead Material**: SACQ (Pb-free solder balls)
Mounting Type**: Surface Mount (SMD)
Weight**: 0.414 g (approximate)

5. Environmental & Operating Conditions

Operating Temperature Range (TC): -40°C to +95°C (Industrial Grade, IT)Micron Technology
Temperature Grade: Automotive Industrial Temperature (AIT)
Storage Temperature Range: -55°C to +125°C
Moisture Sensitivity Level (MSL): Level 3 (per J-STD-020)

6. Key Features

8n-prefetch architecture for high-speed data transfer
Differential bidirectional data strobe (DQS) for reliable data capture
Self-Refresh (SR) and Auto-Refresh (AR) modes supported
Internal ZQ calibration for improved signal integrity
On-die termination (ODT) for better signal quality
Power-down mode for low-power operation
Partial Array Self-Refresh (PASR) option for power optimization
Single rank memory configuration

7. Part Number Decoding (MT41K512M16VRP-107 AIT:P)

MT: Micron Technology prefix
41K: DDR3L SDRAM product family
512M16: 512 Meg × 16-bit organization
VRP: Package type (96-ball TFBGA, SACQ solder)
-107: Speed grade (1.07 ns cycle time, DDR3-1866)
AIT: Automotive Industrial Temperature grade (-40°C to +95°C)
:P: Revision/Version code

8. Typical Applications

Automotive infotainment systems
Industrial control systems
Networking equipment
Embedded computing platforms
High-performance consumer electronics
Medical devices requiring extended temperature operation

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