MTD3N25E Datasheet Summary

General Description

The MTD3N25E is an N-Channel Enhancement-Mode Silicon Gate MOSFET designed for high energy withstand in avalanche and commutation modes. It features a fast recovery time drain-to-source diode, making it suitable for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls. The device is particularly well-suited for bridge circuits where diode speed and commutating safe operating areas are critical.

Features

• Avalanche Energy Specified
• Source-to-Drain Diode Recovery Time: Comparable to a Discrete Fast Recovery Diode
• Diode Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available: 16mm, 13-inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number

Ordering Information

• Part Number: MTD3N25E
• Package: D2PAK (CASE 369A-13, Style 2DPAK)
• Operating Temperature Range: -55°C to +150°C

Electrical Characteristics (TJ = 25°C unless otherwise noted)

OFF CHARACTERISTICS

• Drain-Source Breakdown Voltage (V(BR)DSS): 250 Vdc
• Zero Gate Voltage Drain Current (IDSS): 10 µA (max) at 250 Vdc, 0 Vgs
• Gate-Body Leakage Current (IGSS): 100 nA (max) at ±20 Vdc, 0 Vds

ON CHARACTERISTICS

• Gate Threshold Voltage (VGS(th)): 2.0 to 6.0 Vdc
• Static Drain-Source On-Resistance (RDS(on)): 1.1 to 1.4 Ohms at 10 Vgs, 1.5 A
• Drain-Source On-Voltage (VDS(on)): 5.04 V (max) at 10 Vgs, 3.0 A

DYNAMIC CHARACTERISTICS

• Input Capacitance (Ciss): 307 to 430 pF at 1 MHz
• Output Capacitance (Coss): 57 to 75 pF at 25 Vdc, 0 Vgs, 1 MHz
• Reverse Transfer Capacitance (Crss): 14 to 25 pF at 25 Vdc, 0 Vgs, 1 MHz

SWITCHING CHARACTERISTICS

• Turn-On Delay Time (td(on)): 7.0 to 15 ns
• Rise Time (tr): 5.0 to 15 ns
• Turn-Off Delay Time (td(off)): 15 to 30 ns
• Fall Time (tf): 6.0 to 15 ns
• Gate Charge (QT): 9.8 to 15 nC

SOURCE–DRAIN DIODE CHARACTERISTICS

• Forward On-Voltage (VSD): 0.9 V (max) at 3.0 A, 0 Vgs
• Reverse Recovery Time (trr): 153 ns (max) at 3.0 A, 100 A/µs
• Reverse Recovery Stored Charge (QRR): 0.51 µC (max)

Maximum Ratings (TC = 25°C unless otherwise noted)

• Drain-Source Voltage (VDSS): 250 Vdc
• Drain-Gate Voltage (VDGR): 250 Vdc
• Gate-Source Voltage (VGS): ±20 Vdc
• Gate-Source Voltage (VGSM): ±40 Vdc (non-repetitive, tp ≤ 10 ms)
• Drain Current (ID): 3.0 A (continuous)
• Drain Current (IDM): 1.75 A (continuous @ 100°C)
• Drain Current (ID): 9.0 A (single pulse, tp ≤ 10 µs)
• Total Power Dissipation (PD): 40 W (TA = 25°C)
• Thermal Resistance (RθJC): 3.13 °C/W
• Thermal Resistance (RθJA): 100 °C/W
• Thermal Resistance (RθJA): 71.4 °C/W (mounted to minimum recommended pad size)
• Operating and Storage Temperature Range (TJ, Tstg): -55 to +150 °C
• Single Pulse Drain-to-Source Avalanche Energy (EAS): 45 mJ (starting TJ = 25°C)

Applications

• Power Supplies
• Converters
• PWM Motor Controls
• Bridge Circuits

Package Dimensions

• CASE 369A-13, Style 2DPAKDimensions: 13.2 mm x 6.5 mm x 1.27 mmLead Pitch: 1.27 mmLead Length: 1.27 mmLead Width: 0.51 mm