Marktech Optoelectronics MTD8600N-T

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Specifications
Type
Paramete
Type
Paramete
Power - Max
250 mW
Grade
-
Voltage - Collector Emitter Breakdown (Max)
30 V
Viewing Angle
24°
Current - Collector (Ic) (Max)
50 mA
Operating Temperature
-30°C ~ 100°C
Package / Case
TO-18-2 Metal Can
Qualification
-
Wavelength
880nm
Current - Dark (Id) (Max)
100 nA
Mounting Type
Through Hole
Orientation
Top View
Overview

MTD8600N-T Model Information

Overview

The MTD8600N-T is a photo transistor offered by Marktech Optoelectronics. It is packaged in a TO-18 metal can with a domed cover, making it suitable for applications requiring high reliability and sensitivity.

Key Features

  • High Reliability: Suitable for demanding environments.
  • Narrow Angular Response: ±12 degrees.
  • Metal Can Package: TO-18 with a domed cover.
  • Compact Design: Suitable for space-constrained applications.

Applications

  • Optical Switches: Ideal for applications requiring precise light detection.
  • Optical Sensors: Used in various sensing applications where light detection is critical.
  • Edge Sensing: Detects the presence or absence of objects at the edge.
  • Smoke Detectors: Utilized in smoke detection systems for reliable performance.

Absolute Maximum Ratings (Ta = 25°C)

  • Collector-Emitter Voltage (Vceo): 30 V
  • Emitter-Collector Voltage (Veco): 5 V
  • Collector Current (Ic): 50 mA
  • Collector Power Dissipation (Pc): 250 mW
  • Operating Temperature Range (Topr): -30°C to +100°C
  • Storage Temperature Range (Tstg): -40°C to +125°C
  • Junction Temperature (Tj): 125°C
  • Lead Soldering Temperature (Tls): 260°C (Time 5 sec max, Position: Up to 3 mm from the body)

Electrical & Optical Characteristics (Ta = 25°C)

  • Collector Emitter Current (Icel):Conditions: Vce = 20V, Ee = 0.5mW/cm²Typical: 3.0 mA
  • Collector Dark Current (Iceo):Conditions: Vce = 20V, Ee = 0mW/cm²Max: 100 nA
  • C-E Saturation Voltage (VCE(sat)):Conditions: Ic = 0.2mA, Ee = 5mW/cm²Typical: 0.2 V
  • Spectral Sensitivity (λ): 400~1100 nm
  • Peak Sensitivity Wavelength (λp): 880 nm
  • Switching Time (Rise Time) (Tr):Conditions: RL = 100Ω, Vcc = 5V, Ic = 0.5mATypical: 10.0 µS
  • Switching Time (Fall Time) (Tf):Conditions: RL = 100Ω, Vcc = 5V, Ic = 0.5mATypical: 10.0 µS
  • Angular Response (Ө): ±12 degrees

Additional Information

  • Package Dimensions:Diameter: 4.65 mm ± 0.2 mm
  • Collector Current vs. Irradiance:At 2.0 mW/cm²: ~14 mAAt 1.0 mW/cm²: ~10 mAAt 0.5 mW/cm²: ~6 mA
  • Angular Displacement: ±12 degrees
  • Thermal Derating Curve: Available in the datasheet
  • Relative Response vs. Wavelength:Peak at 880 nmResponse across 400~1100 nm
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