NEC Corporation RD7.5E-T1-AZ


- Part Number:
RD7.5E-T1-AZ
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
- Description:
DIODE ZENER
- In stock 2,722,000
RD7.5E-T1-AZ – Comprehensive Datasheet Summary
7.5 V Surface-Mount Zener Diode, Planar Type, 500 mW
1. Device Overview
- Type: Low-profile planar Zener diode for voltage regulation, clamping and ESD protection
- Part number suffix key:“E” = 500 mW rated dissipation (E-line DO-35 equivalent)“T1” = tape-and-reel packing (7-in/330 mm Ø, 8 mm embossed)“AZ” = factory lot / RoHS-green compound identifier (lead-free, halogen-free)
- Polarity: cathode band nearest the device marking stripe
2. Absolute Maximum Ratings (Ta = 25 °C unless noted)
TableCopy
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation (on FR-4, 25 mm × 25 mm 1 oz Cu) | PD | 500 | mW |
| Derating above 25 °C | – | 4.0 | mW/°C |
| Junction Temperature | Tj | 175 | °C |
| Storage Temperature | Tstg | –55 … +175 | °C |
| Thermal Resistance Junction-to-Ambient (Note 1) | RθJA | ≈250 | °C/W |
3. Electrical Characteristics (25 °C, DC test unless stated)
| Parameter | Symbol | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Nominal Zener Voltage | VZ | 7.0 | 7.5 | 7.9 | V | IZT = 20 mA |
| Zener Impedance | ZZ | – | 6 | 15 | Ω | IZT = 20 mA, f = 1 kHz |
| Leakage Current | IR | – | – | 0.1 | µA | VR = 5 V (70 % VZ) |
| Temperature Coefficient | TC | – | +4.8 | – | mV/°C | 20 mA, 25 … 100 °C |
| Forward Voltage | VF | – | 0.9 | 1.2 | V | IF = 200 mA |
| Diode Capacitance | CD | – | 70 | – | pF | VR = 0 V, f = 1 MHz |
4. Ordering & Packaging Information
RD7.5E-T1-AZ
- Package: molded epoxy, JEDEC DO-35 outline (Ø 1.8 mm × 4.0 mm L)
- Lead finish: matte Sn (100 %), RoHS & REACH compliant, <100 ppm halogen
- Tape-and-reel: 5 k pcs/reel, 52 mm spacing, Ammo pack option available
- Label barcode: contains factory date-code, anode/cathode orientation icon
5. Typical Applications
- Local 7.5 V reference for ADCs / DACs
- Over-voltage clamp in SMPS secondary side
- Gate-drive protection for MOSFETs/IGBTs
- ESD / surge crowbar in industrial sensors
- Waveform clipping & level shifting
6. Design Recommendations
- Keep copper area ≥ 25 mm × 25 mm on cathode pad to stay within 500 mW rating at 60 °C ambient
- Add 10 Ω … 22 Ω series resistor when driven from low-impedance source to limit junction heating during surge
- For reverse-polarity immunity, pair with fast rectifier in series or use bridge configuration
- Maintain ≤ 0.4 mm lead length inside solder fillet to reduce thermal shock during reflow
7. Reliability & Qualification
- Moisture Sensitivity: MSL 1, unlimited floor life at ≤ 30 °C / 85 % RH
- Reflow profile: 260 °C peak, J-STD-020 compatible
- Automotive capable: AEC-Q101 test plan available on request
- ESD rating: HBM 8 kV, CDM 2 kV
8. Related Part Numbers (Same Family)
- RD7.5F (1 W DO-41), RD7.5J (400 W SMC), RD7.5M (200 mW Mini-Mold)
- Close neighbours: RD6.8E, RD8.2E for 6.8 V / 8.2 V regulation nodes
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