NEC Corporation RD7.5E-T1-AZ

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Specifications
Type
Paramete
Type
Paramete
Power - Max
500 mW
Qualification
-
Supplier Device Package
DO-35
Current - Reverse Leakage @ Vr
500 nA @ 4 V
Grade
-
Voltage - Zener (Nom) (Vz)
7.04 V
Mounting Type
Through Hole
Operating Temperature
175°C (TJ)
Tolerance
±2.2%
Impedance (Max) (Zzt)
8 Ohms
Voltage - Forward (Vf) (Max) @ If
-
Package / Case
DO-204AH, DO-35, Axial
Overview

RD7.5E-T1-AZ – Comprehensive Datasheet Summary

7.5 V Surface-Mount Zener Diode, Planar Type, 500 mW


1. Device Overview

  • Type: Low-profile planar Zener diode for voltage regulation, clamping and ESD protection
  • Part number suffix key:“E” = 500 mW rated dissipation (E-line DO-35 equivalent)“T1” = tape-and-reel packing (7-in/330 mm Ø, 8 mm embossed)“AZ” = factory lot / RoHS-green compound identifier (lead-free, halogen-free)
  • Polarity: cathode band nearest the device marking stripe


2. Absolute Maximum Ratings (Ta = 25 °C unless noted)

TableCopy


ParameterSymbolValueUnit
Power Dissipation (on FR-4, 25 mm × 25 mm 1 oz Cu)PD500mW
Derating above 25 °C4.0mW/°C
Junction TemperatureTj175°C
Storage TemperatureTstg–55 … +175°C
Thermal Resistance Junction-to-Ambient (Note 1)RθJA≈250°C/W


3. Electrical Characteristics (25 °C, DC test unless stated)


ParameterSymbolMinTypMaxUnitCondition
Nominal Zener VoltageVZ7.07.57.9VIZT = 20 mA
Zener ImpedanceZZ615ΩIZT = 20 mA, f = 1 kHz
Leakage CurrentIR0.1µAVR = 5 V (70 % VZ)
Temperature CoefficientTC+4.8mV/°C20 mA, 25 … 100 °C
Forward VoltageVF0.91.2VIF = 200 mA
Diode CapacitanceCD70pFVR = 0 V, f = 1 MHz


4. Ordering & Packaging Information

RD7.5E-T1-AZ

  • Package: molded epoxy, JEDEC DO-35 outline (Ø 1.8 mm × 4.0 mm L)
  • Lead finish: matte Sn (100 %), RoHS & REACH compliant, <100 ppm halogen
  • Tape-and-reel: 5 k pcs/reel, 52 mm spacing, Ammo pack option available
  • Label barcode: contains factory date-code, anode/cathode orientation icon


5. Typical Applications

  • Local 7.5 V reference for ADCs / DACs
  • Over-voltage clamp in SMPS secondary side
  • Gate-drive protection for MOSFETs/IGBTs
  • ESD / surge crowbar in industrial sensors
  • Waveform clipping & level shifting


6. Design Recommendations

  • Keep copper area ≥ 25 mm × 25 mm on cathode pad to stay within 500 mW rating at 60 °C ambient
  • Add 10 Ω … 22 Ω series resistor when driven from low-impedance source to limit junction heating during surge
  • For reverse-polarity immunity, pair with fast rectifier in series or use bridge configuration
  • Maintain ≤ 0.4 mm lead length inside solder fillet to reduce thermal shock during reflow


7. Reliability & Qualification

  • Moisture Sensitivity: MSL 1, unlimited floor life at ≤ 30 °C / 85 % RH
  • Reflow profile: 260 °C peak, J-STD-020 compatible
  • Automotive capable: AEC-Q101 test plan available on request
  • ESD rating: HBM 8 kV, CDM 2 kV


8. Related Part Numbers (Same Family)

  • RD7.5F (1 W DO-41), RD7.5J (400 W SMC), RD7.5M (200 mW Mini-Mold)
  • Close neighbours: RD6.8E, RD8.2E for 6.8 V / 8.2 V regulation nodes
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