Name: RKP415KS%23P1
Brand: Renesas
SKU: JM-RKP415KS%23P1
Availability: InStock

Renesas RKP415KS#P1

View All Single, Pre-Biased Bipolar Transistors by Renesas

Part Number:
RKP415KS#P1
Manufacturer:
Renesas
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
Description:
PIN DIODE
In stock 624,000

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Specifications

Type

Paramete

Type

Paramete

Package / Case

Resistance @ If, F

Capacitance @ Vr, F

Operating Temperature

Voltage - Peak Reverse (Max)

Diode Type

Qualification

Supplier Device Package

Current - Max

Grade

Power Dissipation (Max)

Overview

1. Device Type & Primary Use

Description: Composite PIN diode array containing four identical PIN diodes in a single package
Typical Application: Antenna-switching and RF signal-routing circuits in mobile phones and compact wireless equipment

2. Ordering & Physical Identification

TableCopy

Parameter	Value
Ordering Part Number	RKP415KS
Laser Mark	M9
Package Name	MFP12 (12-terminal ultra-thin molded resin)
JEITA Package Code	PUSF0012ZA-A
Device Weight	≈ 0.004 g

3. Absolute Maximum Ratings (Ta = 25 °C, per diode)

TableCopy

Characteristic	Symbol	Limit	Unit
Reverse Voltage	VR	30	V
Forward Current	IF	100	mA
Power Dissipation	Pd	100	mW
Junction Temperature	Tj	125	°C
Storage Temperature	Tstg	–55 to +125	°C

4. Electrical Characteristics (Ta = 25 °C, per diode)

TableCopy

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
Reverse Current	IR	—	—	100	nA	VR = 30 V
Forward Voltage	VF	—	—	1.0	V	IF = 10 mA
Total Capacitance	C	—	—	0.35	pF	VR = 1 V, f = 1 MHz
Forward Resistance	rf	—	—	1.3	Ω	IF = 10 mA, f = 100 MHz
ESD Withstand (HBM)	—	100	—	—	V	C = 200 pF, R = 0 Ω, 1 pulse (fail if post IR > 100 nA @ 30 V)

5. Key Performance Highlights

Ultra-low capacitance (≤ 0.35 pF) → minimal insertion loss at RF
Low forward resistance (≤ 1.3 Ω) → low insertion loss in ON-state
30 V reverse-voltage capability → suits moderate-power antenna switches
100 V ESD immunity → improved handling robustness
MFP12 thin-profile package → 0.50 mm max height, suited to high-density SMT

6. Typical Characteristic Curves (figures in original doc)

Fig.1 IF vs. VF (forward conduction)
Fig.2 IR vs. VR (reverse leakage)
Fig.3 C vs. VR (capacitance variation)
Fig.4 rf vs. IF (forward resistance vs. bias)

7. Mechanical Outline – MFP12 (simplified)

TableCopy

Dimension	Min (mm)	Nom (mm)	Max (mm)
Body Length (D)	2.60	2.70	2.80
Body Width (E)	1.10	1.20	1.30
Height (A2)	0.44	0.47	0.50
Terminal Pitch (e)	—	0.50	—
Terminal Width (b)	0.13	0.18	0.23
Lead Length (L)	0.05	0.10	0.15 Note: Terminal tips are as-cut; solderability of the very end is not guaranteed—verify in process.

8. Pin Configuration (top view,逆时针)

Copy

Pin 1 → Diode 1 Anode
Pin 2 → Diode 1 Cathode
Pin 3 → Diode 2 Anode
Pin 4 → Diode 2 Cathode
Pin 5 → Diode 3 Anode
Pin 6 → Diode 3 Cathode
Pin 7 → Diode 4 Cathode
Pin 8 → Diode 4 Anode
Pin 9 → Diode 3 Cathode (common with pin 6)
Pin 10 → Diode 3 Anode (common with pin 5)
Pin 11 → Diode 2 Cathode (common with pin 4)
Pin 12 → Diode 2 Anode (common with pin 3)

(Verify exact pad assignment on the PCB footprint drawing before layout.)

9. Application Notes & Recommendations

Use per-diode bias ≤ 100 mA and ensure total power ≤ 100 mW per device
Provide adequate ground-plane area for heat-spreading; device is very thin
Because lead tips are cut-plane, apply solder-paste slightly away from the very ends or perform solderability qualification
Observe normal ESD handling; although rated 100 V HBM, PIN diodes can be damaged by higher discharges
Not qualified for aerospace, life-support, or nuclear control without additional Renesas screening

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