Toshiba Semiconductor and Storage RN2402S,LF(D

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Specifications
Type
Paramete
Type
Paramete
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
100 mA
Resistor - Base (R1)
10 kOhms
Supplier Device Package
S-Mini
Grade
-
Current - Collector Cutoff (Max)
500nA
Package / Case
TO-236-3, SC-59, SOT-23-3
Voltage - Collector Emitter Breakdown (Max)
50 V
Power - Max
200 mW
Transistor Type
PNP - Pre-Biased
Qualification
-
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Mounting Type
Surface Mount
Frequency - Transition
200 MHz
Overview

DESCRIPTION



· The document provides detailed specifications for a specific electronic component.

· It includes essential information for engineers and designers to integrate the component into their systems.

· The datasheet is structured to facilitate quick access to critical data points.



FEATURES



· High efficiency and low power consumption for energy-sensitive applications.

· Robust design ensures reliability under various environmental conditions.

· Compact form factor suitable for space-constrained applications.

· Advanced thermal management features to maintain optimal performance.



APPLICATIONS



· Ideal for use in portable electronic devices due to its low power requirements.

· Suitable for industrial control systems where reliability is critical.

· Can be integrated into automotive electronics for enhanced performance and durability.

· Applicable in consumer electronics for efficient power management solutions.



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