Name: SUD19P06-60-GE3
Brand: Vishay
SKU: JM-SUD19P06-60-GE3
Availability: InStock

Vishay SUD19P06-60-GE3

View All FET, MOSFET Arrays by Vishay

Part Number:
SUD19P06-60-GE3
Manufacturer:
Vishay
Category:
FET, MOSFET Arrays
RoHs:
RoHS Compliant
Datasheet:
SUD19P06-60-GE3_Datesheet
Description:
MOSFET P-CH 60V 18.3A TO252
In stock 67,226

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Specifications

Type

Paramete

Type

Paramete

Operating Temperature

-55°C ~ 150°C (TJ)

Qualification

Vgs (Max)

±20V

FET Feature

Current - Continuous Drain (Id) @ 25°C

18.3A (Tc)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Input Capacitance (Ciss) (Max) @ Vds

1710 pF @ 25 V

Power Dissipation (Max)

2.3W (Ta), 38.5W (Tc)

Drain to Source Voltage (Vdss)

60 V

FET Type

P-Channel

Gate Charge (Qg) (Max) @ Vgs

40 nC @ 10 V

Rds On (Max) @ Id, Vgs

60mOhm @ 10A, 10V

Supplier Device Package

TO-252AA

Vgs(th) (Max) @ Id

3V @ 250µA

Grade

Overview

SUD19P06-60-GE3 Device Information

Overview

The SUD19P06-60-GE3 is a P-Channel 60V TrenchFET® Power MOSFET designed for high-side switching applications. It features low on-state resistance (RDS(on)), high continuous drain current, and robust avalanche performance, making it suitable for demanding power management applications such as full bridge converters and DC/DC converters for LCD displays.

Key Features

60V Drain-Source Voltage (VDS)
Low On-State Resistance (RDS(on)): 0.060 Ω at VGS = -10V
High Continuous Drain Current (ID): Up to 18.3A at 25°C
100% UIS Tested
RoHS and Halogen-Free Compliance
Package: TO-252 (DPAK)

Applications

High-Side Switch for Full Bridge Converters
DC/DC Converters for LCD Displays
Power Management in Industrial and Automotive Systems
Battery Management Systems

Electrical Characteristics (TJ = 25°C)

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	VDS	-	60	-	V
Gate Threshold Voltage	VGS(th)	-3	-	-1	V
On-State Drain Current	ID(on)	-	30	-	A
Drain-Source On-State Resistance	RDS(on)	0.048	0.060	0.120	Ω
Total Gate Charge	Qg	-	26	40	nC
Input Capacitance	Ciss	1140	1710	-	pF
Output Capacitance	Coss	-	130	-	pF
Reverse Transfer Capacitance	Crss	-	90	-	pF

Absolute Maximum Ratings (TA = 25°C)

Parameter	Symbol	Limit	Unit
Drain-Source Voltage	VDS	-60	V
Gate-Source Voltage	VGS	±20	V
Continuous Drain Current (TJ = 150°C)	ID	18.3	A
Pulsed Drain Current	IDM	30	A
Avalanche Current, Single Pulse	IAS	22	A
Repetitive Avalanche Energy, Single Pulse	EAS	24.2	mJ
Power Dissipation (TC = 25°C)	PD	38.5	W
Operating Junction and Storage Temperature Range	TJ, Tstg	-55 to 150	°C

Thermal Resistance Ratings

Parameter	Symbol	Typical	Maximum	Unit
Junction-to-Ambient (Transient)	RthJA	17	21	°C/W
Junction-to-Ambient (Steady State)	RthJA	45	55	°C/W
Junction-to-Case	RthJC	2.7	3.25	°C/W

Package Information

Package Type: TO-252 (DPAK)
Lead-Free and Halogen-Free: Compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21

Ordering Information

Part Number: SUD19P06-60-GE3
Description: P-Channel 60V MOSFET, Lead-Free and Halogen-Free
Package: TO-252 (DPAK)

Notes

The device is tested for 100% UIS (Unclamped Inductive Switching) capability.
The thermal resistance values are typical and may vary based on the PCB layout and thermal management.
For optimal performance, ensure proper heat sinking and thermal management, especially in high-current applications.

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