DESCRIPTION

· Planar silicon photodiode in a transparent molded plastic package.
· Suitable for direct mounting to PCB.
· Devices can be positioned side by side to form arrays.
· Designed for excellent sensitivity at low levels of irradiance.

FEATURES

· Active area: 0.012 in² (7.45 mm²).
· Storage and operating temperature range: -20°C to 80°C.
· Short circuit current: 50-70 µA at 1000 Lux, 2850 K.
· Open circuit voltage: 300-365 mV at 1000 Lux, 2850 K.
· Dark current: 2-30 nA at VR = 10 V.
· Junction capacitance: 60 pF at 1 MHz, VR = 0 V.
· Rise/fall time: 50 nsec at 1 kΩ, VR = 10 V, 833 nm.
· Sensitivity at peak: 0.60 A/W.
· Spectral application range: 400-1100 nm.
· Spectral response peak: 900 nm.
· Breakdown voltage: 40 V.
· Angular response at 50% response point: ±50 degrees.
· Noise equivalent power: 4.8 x 10⁻¹⁴ W.
· Specific detectivity: 5.7 x 10¹² cm Hz¹/²/W.

APPLICATIONS

· Suitable for low irradiance sensing applications.
· Ideal for use in PCB-mounted arrays.
· Applicable in spectral range from 400 to 1100 nm.