Diodes Incorporated ZXMP10A17KTC

View All Single, Pre-Biased Bipolar Transistors by Diodes Incorporated

Part Number:
ZXMP10A17KTC
Manufacturer:
Diodes Incorporated
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
ZXMP10A17KTC_Datesheet
Description:
MOSFET P-CH 100V 2.4A TO252-2
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Specifications

Type

Paramete

Type

Paramete

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs

350mOhm @ 1.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Grade

Power Dissipation (Max)

2W (Ta)

Qualification

Drain to Source Voltage (Vdss)

100 V

Supplier Device Package

TO-252-3

Input Capacitance (Ciss) (Max) @ Vds

424 pF @ 50 V

Vgs (Max)

±20V

Current - Continuous Drain (Id) @ 25°C

2.4A (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

FET Type

P-Channel

Gate Charge (Qg) (Max) @ Vgs

10.7 nC @ 10 V

FET Feature

Mounting Type

Surface Mount

Overview

ZXMP10A17KTC – Complete Datasheet Summary

100 V P-Channel Enhancement-Mode MOSFET, TO-252 (D-PAK), 3.9 A, 350 mΩ max @ –10 VGS, 2 500-pc Reel

1. Ordering Code Identity

Base part: ZXMP10A17K
Suffix “TC”: 13-inch (330 mm) Ø embossed tape & reel, 16 mm pitch, 2 500 pieces/reel
Package shipped: TO-252 (D-PAK) “Green” (Pb-free, halogen-/antimony-free)

2. Quick Features

–100 V drain-source rating with only 350 mΩ max RDS(on) @ VGS = –10 V
–3.9 A continuous drain current (25 °C, steady-state on 50 mm² 2-oz Cu pad)
Low gate charge (Qg ≈ 10.7 nC @ –10 V) – easy 5 V logic level drive
Fast switching: td(on) 3 ns, tr 3.5 ns, td(off) 13.4 ns, tf 7.2 ns (typ, 1 A load)
AEC-Q101 qualified die – suitable for automotive & high-reliability designs
100 % matte-tin plated copper leads, MSL-1 unlimited floor life

3. Absolute Maximum Ratings (TJ = 25 °C unless stated)

Parameter	Symbol	Value	Unit
Drain-source voltage	VDSS	–100	V
Gate-source voltage	VGS	±20	V
Continuous drain current (Note 5)	ID	–3.9	A
Continuous drain current (Note 6, TA = 70 °C)	ID	–3.1	A
Pulsed drain current (300 µs, 2 % duty)	IDM	–11.3	A
Continuous source current (body diode)	IS	–8.7	A
Pulsed source current	ISM	–11.3	A
Power dissipation (Note 5)	PD	4.0	W
Operating & storage junction temp.	TJ, Tstg	–55 … +150	°C Note 5: Device on 50 mm × 50 mm × 1.6 mm FR-4, 2-oz Cu, still-air steady-state. Note 6: Same board, TA = 70 °C.

4. Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Junction-to-ambient (50 mm 2-oz pad)	RθJA	—	31	°C/W
Junction-to-ambient (25 mm 1-oz pad)	RθJA	—	62	°C/W
Junction-to-case (solder-point)	RθJL	—	2.4	°C/W
Power derating factor (50 mm pad)	—	32	—	mW/°C

5. Electrical Characteristics (TA = 25 °C unless noted)

OFF CHARACTERISTICS

Parameter	Test Condition	Min	Typ	Max	Unit
Drain-source breakdown	ID = –250 µA, VGS = 0	–100	—	—	V
Zero-gate drain leakage	VDS = –100 V, VGS = 0	—	—	–0.5	µA
Gate-source leakage	VGS = ±20 V, VDS = 0	—	—	±100	nA

ON CHARACTERISTICS (pulse test 300 µs, ≤ 2 % duty)

Parameter	Condition	Min	Typ	Max	Unit
Gate threshold	VDS = VGS, ID = –250 µA	–2.0	—	–4.0	V
RDS(on)	VGS = –10 V, ID = –1.4 A	—	0.28	0.35	Ω
RDS(on)	VGS = –6 V, ID = –1.2 A	—	0.36	0.45	Ω
Forward transconductance	VDS = –15 V, ID = –1.4 A	—	2.8	—	S

DYNAMIC & SWITCHING (Note 11)

Parameter	Typ	Unit
Input capacitance Ciss	424	pF
Output capacitance Coss	36.6	pF
Reverse-transfer Crss	29.8	pF
Total gate charge Qg (–10 V)	10.7	nC
Total gate charge Qg (–6 V)	7.1	nC
Turn-on delay td(on)	3.0	ns
Rise time tr	3.5	ns
Turn-off delay td(off)	13.4	ns
Fall time tf	7.2	ns

BODY-DIODE PARAMETERS

Parameter	Typ	Max	Unit
Forward voltage VSD	–0.85	–0.95	V	IS = –1.7 A
Reverse-recovery time trr	33	—	ns
Reverse-recovery charge Qrr	48	—	nC

6. Typical Performance Curves

RDS(on) vs ID: stays ≤ 0.3 Ω up to –3 A at –10 VGS
Normalized RDS(on): +0.4 %/°C slope (150 °C = 1.4 × 25 °C value)
Safe Operating Area: 100 V, 11 A pulsed, limited by 150 °C junction
Transient thermal impedance: ZθJC = 0.3 °C/W for 1 ms single pulse

7. Applications

24 V / 48 V industrial and telecom high-side switches
Motor-driver half-bridge top-side FET
Automotive relay / lamp / solenoid driver (AEC-Q101)
DC-DC converter synchronous rectifier (low-side)
UPS and battery-management disconnect switches

8. PCB & Mounting Guidelines

Package: TO-252 (D-PAK) – drain tab = drain potential
Suggested copper: ≥ 50 mm² 2-oz to achieve 31 °C/W RθJA
Solder profile: standard Pb-free, peak 260 °C, MSL-1 unlimited floor life
Stencil: 0.125 mm thick, 70 % drain-pad coverage to avoid voids
Mechanical: 0.54 N·m max screw on heatsink interface

9. Packing Information – “TC” Ree

Detail	Value
Reel diameter	13 in (330 mm)
Carrier tape width	16 mm
Pitch	4 mm
Pieces / reel	2 500
Dry-pack	not required (MSL-1)
Barcode label: Diodes BPL – RoHS, date-code, lot, AEC-Q flag

10. Related Parts (same die, different packages)

ZXMP10A17KTA: 7-inch reel (1 k-pc)
ZXMP10A17K-Q: die-only wafer for module assembly
All data extracted from Diodes Inc. DS32028 Rev. 5-2 (April 2014) – verify latest revision before production.

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