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- Single, Pre-Biased Bipolar Transistors(442)
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DRC9A43E0L
TRANS PREBIAS NPN 50V SSMINI3
Panasonic
DRC5643T0L
TRANS PREBIAS NPN 20V SMINI3
Panasonic
DRC2643T0L
TRANS PREBIAS NPN 20V 0.6A MINI3
Panasonic
DRA2523E0L
TRANS PREBIAS PNP 50V 0.5A MINI3
Panasonic
DRC2614T0L
TRANS PREBIAS NPN 20V 0.6A MINI3
Panasonic
DRA2L14Y0L
TRANS PREBIAS PNP 30V 0.1A MINI3
Panasonic
DRA2533Q0L
TRANS PREBIAS PNP 50V 0.5A MINI3
Panasonic
DRC5614T0L
TRANS PREBIAS NPN 20V SMINI3
Panasonic
DRC2144G0L
TRANS PREBIAS NPN 50V 0.1A MINI3
Panasonic
DRC2115G0L
TRANS PREBIAS NPN 50V 0.1A MINI3
Panasonic
DRC2143Y0L
TRANS PREBIAS NPN 50V 0.1A MINI3
Panasonic
DRA2143Y0L
TRANS PREBIAS PNP 50V 0.1A MINI3
Panasonic
DRA2115T0L
TRANS PREBIAS PNP 50V 0.1A MINI3
Panasonic
DRA2115G0L
TRANS PREBIAS PNP 50V 0.1A MINI3
Panasonic
DRC9143Y0L
TRANS PREBIAS NPN 50V SSMINI3
Panasonic
DRC5143Y0L
TRANS PREBIAS NPN 50V SMINI3
Panasonic
DRC5144G0L
TRANS PREBIAS NPN 50V SMINI3
Panasonic
DRA9143Y0L
TRANS PREBIAS PNP 50V SSMINI3
Panasonic
DRC3123E0L
TRANS PREBIAS NPN 50V SSSMINI3
Panasonic
DRA9115G0L
TRANS PREBIAS PNP 50V SSMINI3
Panasonic
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What are Pre-biased bipolar transistors?
Pre-biased bipolar transistors include internal resistors that keep the device close to its bias or operating point when no input signal is present. This biasing enables the transistor to function more efficiently and generate a stable, undistorted output signal. Additionally, pre-biased transistors minimize the need for external circuit components, leading to lower project costs.
- Manufacturers
- Stocking Options
- Environmental Options
- Resistance - RDS(On)
- Test Condition
- Technology
- Td (on/off) @ 25°C
- Switching Energy
- Supplier Device Package
- Structure
- Speed
- SCR Type
- Reverse Recovery Time (trr)
- Resistor - Emitter Base (R2)
- Resistor - Base (R1)
- Resistance @ If, F
- Tolerance
- Regulator Current (Max)
- Rds On (Max) @ Id, Vgs
- Qualification
- Q @ Vr, F
- Power Dissipation (Max)
- Power - Output
- Power - Max
- Package / Case
- Operating Temperature - Junction
- Operating Temperature
- Number of SCRs, Diodes
- Voltage - Collector Emitter Breakdown (Max)
- Voltage - Zener (Nom) (Vz)
- Voltage - Test
- Voltage - Rated
- Voltage - Peak Reverse (Max)
- Voltage - On State (Vtm) (Max)
- Voltage - Off State
- Voltage - Limiting (Max)
- Voltage - Isolation
- Voltage - Gate Trigger (Vgt) (Max)
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Voltage - Cutoff (VGS off) @ Id
- NTC Thermistor
- Voltage - Breakover
- Voltage - Breakdown (V(BR)GSS)
- Voltage - Anode - Cathode (Vak)(Max)
- Voltage
- Vgs(th) (Max) @ Id
- Vgs (Max)
- Vce(on) (Max) @ Vge, Ic
- Vce Saturation (Max) @ Ib, Ic
- Type
- Triac Type
- Transistor Type
- Current - Collector Pulsed (Icm)
- Current - Test
- Current - Reverse Leakage @ Vr
- Current - Peak Output
- Current - On State (It (RMS)) (Max)
- Current - On State (It (AV)) (Max)
- Current - Off State (Max)
- Current - Non Rep. Surge 50, 60Hz (Itsm)
- Current - Max
- Current - Hold (Ih) (Max)
- Current - Gate Trigger (Igt) (Max)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Current - Continuous Drain (Id) @ 25°C
- Current Drain (Id) - Max
- Current - Collector Cutoff (Max)
- Current - Collector (Ic) (Max)
- Current - Breakover
- Current - Average Rectified (Io) (per Diode)
- Current - Average Rectified (Io)
- Current
- Configuration
- Capacitance Ratio Condition
- Capacitance Ratio
- Capacitance @ Vr, F
- Base Product Number
- Gate Charge
- Noise Figure
- Mounting Type
- Mfr
- Input Type
- Input Capacitance (Ciss) (Max) @ Vds
- Input Capacitance (Cies) @ Vce
- Input
- Impedance (Max) (Zzt)
- IGBT Type
- Grade
- Gate Charge (Qg) (Max) @ Vgs
- Applications
- Gain
- Frequency - Transition
- Frequency
- FET Type
- FET Feature
- Drive Voltage (Max Rds On, Min Rds On)
- Drain to Source Voltage (Vdss)
- Diode Type
- Diode Configuration
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Current Rating (Amps)
