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- Single, Pre-Biased Bipolar Transistors(770)
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DTB543ZMT2L
TRANS PREBIAS PNP 12V 0.5A VMT3
Rohm Semiconductor
DTA144EBT2L
TRANS PREBIAS PNP 50V 0.1A VMN3
Rohm Semiconductor
DTD143ESTP
TRANS PREBIAS NPN 50V 0.5A SPT
Rohm Semiconductor
DTD113ZSTP
TRANS PREBIAS NPN 50V 0.5A SPT
Rohm Semiconductor
DTC144EBT2L
TRANS PREBIAS NPN 50V 0.1A VMN3
Rohm Semiconductor
DTC143TKAT246
TRANS PREBIAS NPN 50V 0.1A SMT3
Rohm Semiconductor
DTA114EBT2L
TRANS PREBIAS PNP 50V 0.1A VMN3
Rohm Semiconductor
DTC143ZEBHZGTL
TRANS PREBIAS NPN 0.1A EMT3F
Rohm Semiconductor
DTC143ZUBHZGTL
TRANS PREBIAS NPN 0.1A UMT3F
Rohm Semiconductor
DTC143EUBHZGTL
TRANS PREBIAS NPN 0.1A UMT3F
Rohm Semiconductor
DTA143EEBHZGTL
TRANS PREBIAS PNP 0.1A EMT3F
Rohm Semiconductor
DTC114YUBHZGTL
TRANS PREBIAS NPN 0.1A UMT3F
Rohm Semiconductor
DTC114EUBHZGTL
TRANS PREBIAS NPN 0.1A UMT3F
Rohm Semiconductor
DTB713ZETL
TRANS PREBIAS PNP 30V 0.2A EMT3
Rohm Semiconductor
DTD123TSTP
TRANS PREBIAS NPN 40V 0.5A SPT
Rohm Semiconductor
DTB743ZETL
TRANS PREBIAS PNP 30V 0.2A EMT3
Rohm Semiconductor
DTB743XETL
TRANS PREBIAS PNP 30V 0.2A EMT3
Rohm Semiconductor
DTB723YETL
TRANS PREBIAS PNP 30V 0.2A EMT3
Rohm Semiconductor
DTC114EBT2L
TRANS PREBIAS NPN 50V 0.1A VMN3
Rohm Semiconductor
DTA114EUBTL
TRANS PREBIAS PNP 50V UMT3F
Rohm Semiconductor
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What are Pre-biased bipolar transistors?
Pre-biased bipolar transistors include internal resistors that keep the device close to its bias or operating point when no input signal is present. This biasing enables the transistor to function more efficiently and generate a stable, undistorted output signal. Additionally, pre-biased transistors minimize the need for external circuit components, leading to lower project costs.
- Manufacturers
- Stocking Options
- Environmental Options
- Rds On (Max) @ Id, Vgs
- Switching Energy
- Supplier Device Package
- Structure
- Speed
- SCR Type
- Reverse Recovery Time (trr)
- Resistor - Emitter Base (R2)
- Resistor - Base (R1)
- Resistance @ If, F
- Resistance - RDS(On)
- Td (on/off) @ 25°C
- Qualification
- Power Dissipation (Max)
- Power - Output
- Power - Max
- Package / Case
- Operating Temperature - Junction
- Operating Temperature
- Number of SCRs, Diodes
- NTC Thermistor
- Noise Figure
- Voltage - Collector Emitter Breakdown (Max)
- Voltage - Zener (Nom) (Vz)
- Voltage - Test
- Voltage - Rated
- Voltage - Peak Reverse (Max)
- Voltage - On State (Vtm) (Max)
- Voltage - Off State
- Voltage - Gate Trigger (Vgt) (Max)
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Voltage - Cutoff (VGS off) @ Id
- Mounting Type
- Voltage - Breakover
- Voltage - Breakdown (V(BR)GSS)
- Vgs(th) (Max) @ Id
- Vgs (Max)
- Vce(on) (Max) @ Vge, Ic
- Vce Saturation (Max) @ Ib, Ic
- Transistor Type
- Tolerance
- Test Condition
- Technology
- Current - Gate Trigger (Igt) (Max)
- Current Drain (Id) - Max
- Current - Test
- Current - Reverse Leakage @ Vr
- Current - Peak Output
- Current - On State (It (RMS)) (Max)
- Current - On State (It (AV)) (Max)
- Current - Off State (Max)
- Current - Non Rep. Surge 50, 60Hz (Itsm)
- Current - Max
- Current - Hold (Ih) (Max)
- Current Rating (Amps)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Current - Continuous Drain (Id) @ 25°C
- Current - Collector Pulsed (Icm)
- Current - Collector Cutoff (Max)
- Current - Collector (Ic) (Max)
- Current - Breakover
- Current - Average Rectified (Io) (per Diode)
- Current - Average Rectified (Io)
- Configuration
- Capacitance @ Vr, F
- Gain
- Mfr
- Input Type
- Input Capacitance (Ciss) (Max) @ Vds
- Input Capacitance (Cies) @ Vce
- Input
- Impedance (Max) (Zzt)
- IGBT Type
- Grade
- Gate Charge (Qg) (Max) @ Vgs
- Gate Charge
- Base Product Number
- Frequency - Transition
- Frequency
- FET Type
- FET Feature
- Drive Voltage (Max Rds On, Min Rds On)
- Drain to Source Voltage (Vdss)
- Diode Type
- Diode Configuration
- DC Current Gain (hFE) (Min) @ Ic, Vce
