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- Single, Pre-Biased Bipolar Transistors(22)
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DTC114WUA-HF
TRANS PREBIAS NPN 0.1A SOT323
Comchip Technology
DTC113ZUA-HF
TRANS PREBIAS NPN 0.1A SOT323
Comchip Technology
DTC123YUA-HF
TRANS PREBIAS NPN 0.1A SOT323
Comchip Technology
DTC143ZUA-HF
TRANS PREBIAS NPN 0.1A SOT323
Comchip Technology
DTC123JUA-HF
TRANS PREBIAS NPN 0.1A SOT323
Comchip Technology
DTC143XUA-HF
TRANS PREBIAS NPN 0.1A SOT323
Comchip Technology
DTC114YUA-HF
TRANS PREBIAS NPN SOT323
Comchip Technology
DTC123YCA-HF
TRANS PREBIAS NPN 50V SOT23-3
Comchip Technology
DTA123YCA-HF
TRANS PREBIAS PNP 50V SOT23-3
Comchip Technology
DTA143XCA-HF
TRANS PREBIAS PNP 50V SOT23-3
Comchip Technology
DTC114WCA-HF
TRANS PREBIAS NPN 50V SOT23-3
Comchip Technology
DTC113ZCA-HF
TRANS PREBIAS NPN 50V SOT23-3
Comchip Technology
DTC143XCA-HF
TRANS PREBIAS NPN 50V SOT23-3
Comchip Technology
DTC114YCA-HF
TRANS PREBIAS NPN 50V SOT23-3
Comchip Technology
DTA114YCA-HF
TRANS PREBIAS PNP 50V SOT23-3
Comchip Technology
DTA123JCA-HF
TRANS PREBIAS PNP 50V SOT23-3
Comchip Technology
DTA143ZCA-HF
TRANS PREBIAS PNP 50V SOT23-3
Comchip Technology
DTC143ZCA-HF
TRANS PREBIAS NPN 50V SOT23-3
Comchip Technology
DTC123JCA-HF
TRANS PREBIAS NPN 50V SOT23-3
Comchip Technology
DTA113ZCA-HF
TRANS PREBIAS PNP 50V SOT23-3
Comchip Technology
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What are Pre-biased bipolar transistors?
Pre-biased bipolar transistors include internal resistors that keep the device close to its bias or operating point when no input signal is present. This biasing enables the transistor to function more efficiently and generate a stable, undistorted output signal. Additionally, pre-biased transistors minimize the need for external circuit components, leading to lower project costs.
- Manufacturers
- Stocking Options
- Environmental Options
- Rds On (Max) @ Id, Vgs
- Switching Energy
- Supplier Device Package
- Structure
- Speed
- SCR Type
- Reverse Recovery Time (trr)
- Resistor - Emitter Base (R2)
- Resistor - Base (R1)
- Resistance @ If, F
- Resistance - RDS(On)
- Td (on/off) @ 25°C
- Qualification
- Power Dissipation (Max)
- Power - Output
- Power - Max
- Package / Case
- Operating Temperature - Junction
- Operating Temperature
- Number of SCRs, Diodes
- NTC Thermistor
- Noise Figure
- Voltage - Collector Emitter Breakdown (Max)
- Voltage - Zener (Nom) (Vz)
- Voltage - Test
- Voltage - Rated
- Voltage - Peak Reverse (Max)
- Voltage - On State (Vtm) (Max)
- Voltage - Off State
- Voltage - Gate Trigger (Vgt) (Max)
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Voltage - Cutoff (VGS off) @ Id
- Mounting Type
- Voltage - Breakover
- Voltage - Breakdown (V(BR)GSS)
- Vgs(th) (Max) @ Id
- Vgs (Max)
- Vce(on) (Max) @ Vge, Ic
- Vce Saturation (Max) @ Ib, Ic
- Transistor Type
- Tolerance
- Test Condition
- Technology
- Current - Gate Trigger (Igt) (Max)
- Current Drain (Id) - Max
- Current - Test
- Current - Reverse Leakage @ Vr
- Current - Peak Output
- Current - On State (It (RMS)) (Max)
- Current - On State (It (AV)) (Max)
- Current - Off State (Max)
- Current - Non Rep. Surge 50, 60Hz (Itsm)
- Current - Max
- Current - Hold (Ih) (Max)
- Current Rating (Amps)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Current - Continuous Drain (Id) @ 25°C
- Current - Collector Pulsed (Icm)
- Current - Collector Cutoff (Max)
- Current - Collector (Ic) (Max)
- Current - Breakover
- Current - Average Rectified (Io) (per Diode)
- Current - Average Rectified (Io)
- Configuration
- Capacitance @ Vr, F
- Gain
- Mfr
- Input Type
- Input Capacitance (Ciss) (Max) @ Vds
- Input Capacitance (Cies) @ Vce
- Input
- Impedance (Max) (Zzt)
- IGBT Type
- Grade
- Gate Charge (Qg) (Max) @ Vgs
- Gate Charge
- Base Product Number
- Frequency - Transition
- Frequency
- FET Type
- FET Feature
- Drive Voltage (Max Rds On, Min Rds On)
- Drain to Source Voltage (Vdss)
- Diode Type
- Diode Configuration
- DC Current Gain (hFE) (Min) @ Ic, Vce
