Name: BSS84PH6327XTSA1
Brand: Infineon Technologies
SKU: JM-BSS84PH6327XTSA1
Availability: InStock

Infineon Technologies BSS84PH6327XTSA1

View All Single FETs, MOSFETs by Infineon Technologies

Part Number:
BSS84PH6327XTSA1
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
RoHs:
Non-RoHS Compliant
Datasheet:
BSS84PH6327XTSA1_Datesheet
Description:
MOSFET P-CH 60V 170MA SOT23-3
In stock 0

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Specifications

Type

Paramete

Type

Paramete

FET Type

P-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Qualification

Rds On (Max) @ Id, Vgs

8Ohm @ 170mA, 10V

FET Feature

Mounting Type

Surface Mount

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

1.5 nC @ 10 V

Power Dissipation (Max)

360mW (Ta)

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

PG-SOT23

Current - Continuous Drain (Id) @ 25°C

170mA (Ta)

Drain to Source Voltage (Vdss)

60 V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

19 pF @ 25 V

Grade

Overview

DESCRIPTION

· The BSS84P is a P-Channel enhancement mode small-signal transistor designed for logic level applications.

· It is avalanche rated and dV/dt rated, packaged in PG-SOT-23, suitable for tape and reel mounting.

FEATURES

· P-Channel enhancement mode for efficient switching.

· Logic level compatibility for easy integration into digital circuits.

· Avalanche and dV/dt ratings ensure robustness in transient conditions.

· Halogen-free and compliant with AEC Q101 standards for automotive applications.

· ESD protection according to JESD22-A114-HBM Class 0.

APPLICATIONS

· Ideal for use in power management circuits in portable devices.

· Suitable for automotive electronics due to its compliance with AEC Q101.

· Effective in switching applications where logic level control is required.

· Can be used in environments requiring robust transient response and ESD protection.

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