BSP77E6433HUMA1 Product Summary

Basic Information

• Part Number: BSP77E6433HUMA1
• Package Type: PG-SOT223-4
• RoHS Compliance: Green product (RoHS compliant)

Product Description

The BSP77 is an N-channel vertical power FET in Smart SIPMOS™ technology, designed for switching and linear applications. It features embedded protection functions, making it suitable for various types of resistive, inductive, and capacitive loads. It is particularly useful for 12V DC applications and can replace electromechanical relays and discrete circuits.

Applications

• Suitable for all types of resistive, inductive, and capacitive loads in switching or linear applications.
• Compatible with microcontroller power switches for 12V DC applications.
• Replaces electromechanical relays and discrete circuits.

Features

• Logic Level Input
• Input Protection (ESD)
• Thermal shutdown with auto restart
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Analog driving possible

Maximum Ratings (@Tj = 25°C, unless otherwise specified)

• Drain-Source Voltage (VDS): 42 V
• Supply Voltage for Full Short-Circuit Protection (Vbb(SC)): 42 V
• Continuous Input Voltage (VIN): -0.2 to +10 V
• Continuous Input Current (IIN):Self-limited for -0.2V ≤ VIN ≤ 10V|IIN| ≤ 2 mA for VIN < -0.2V or VIN > 10V
• Operating Temperature (Tj): -40 to +150 °C
• Storage Temperature (Tstg): -55 to +150 °C
• Power Dissipation (Ptot): 3.8 W (TC = 85 °C)
• Unclamped Single Pulse Inductive Energy (EAS): 250 mJ
• Load Dump Protection (VLoadDump): 50 V (VIN = 0 and 10 V, td = 400 ms, RI = 2 Ω, RL = 6 Ω, VA = 13.5 V)
• Electrostatic Discharge Voltage (VESD): 2 kV (Human Body Model, according to Jedec norm EIA/JESD22-A114-B, Section 4)

Thermal Resistance

• Junction to Ambient (RthJA):@ min. footprint: 125 K/W@ 6 cm² cooling area: 72 K/W
• Junction to Soldering Point (RthJS): 17 K/W

Electrical Characteristics (@Tj = 25°C, unless otherwise specified)

• Drain-Source Clamp Voltage (VDS(AZ)): 42 to 55 V (ID = 10 mA)
• Off-State Drain Current (IDSS):TJ = -40...+85 °C, VDS = 32 V, VIN = 0 V: 1.5 to 8 µATj = 150 °C: 12 µA
• Input Threshold Voltage (VIN(th)):ID = 0.6 mA, Tj = 25 °C: 1.3 to 1.7 VID = 0.6 mA, Tj = 150 °C: 0.8 to 2.2 V
• On-State Input Current (IIN(on)): 10 to 30 µA
• On-State Resistance (RDS(on)):VIN = 5 V, ID = 2.17 A, Tj = 25 °C: 90 to 160 mΩVIN = 5 V, ID = 2.17 A, Tj = 150 °C: 120 to 240 mΩVIN = 10 V, ID = 2.17 A, Tj = 25 °C: 70 to 130 mΩVIN = 10 V, ID = 2.17 A, Tj = 150 °C: 100 to 200 mΩ
• Nominal Load Current (ID(Nom)): 2.17 to 2.8 A (VDS = 0.5 V, Tj < 150°C, VIN = 10 V, TA = 85 °C)
• Current Limit (ID(lim)):VIN = 10 V, VDS = 12 V, tm = 200 µs: 10 to 20 A

Dynamic Characteristics

• Turn-On Time (ton): 40 to 100 µs (VIN to 90% ID, RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V)
• Turn-Off Time (toff): 70 to 100 µs (VIN to 10% ID, RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V)
• Slew Rate On (-dVDS/dton): 0.4 to 1.5 V/µs (70 to 50% Vbb, RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V)
• Slew Rate Off (dVDS/dtoff): 0.6 to 1.5 V/µs (50 to 70% Vbb, RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V)

Protection Functions

• Thermal Overload Trip Temperature (Tjt): 150 to 175 °C
• Thermal Hysteresis (ΔTjt): 10 K
• Input Current Protection Mode (IIN(Prot)): 100 to 300 µA (Tj = 150 °C)
• Unclamped Single Pulse Inductive Energy (EAS): 250 mJ (ID = 2.17 A, Tj = 25 °C, Vbb = 12 V)

Inverse Diode

• Inverse Diode Forward Voltage (VSD): 1 to 1.5 V (IF = 10.9 A, tm = 250 µs, VIN = 0 V, tP = 300 µs)

Package Outline Dimensions

• PG-SOT223-4:A: 6.5 ± 0.2 mmB: 7 ± 0.3 mmHeight: 1.6 ± 0.1 mmLead Length: 0.25 mmLead Width: 0.25 mmLead Thickness: 0.1 mm