InterFET IF170DST3

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  • Part Number:

    IF170DST3

  • Manufacturer:

    InterFET

  • Category:

    JFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf IF170DST3_Datesheet

  • Description:

    JFET N-Channel -30V Low Noise

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Current - Drain (Idss) @ Vds (Vgs=0)
22 mA @ 10 V
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
1.5 V @ 1 nA
Package / Case
SOT-23-3
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Resistance - RDS(On)
38 Ohms
Input Capacitance (Ciss) (Max) @ Vds
15pF @ 10V
Power - Max
350 mW
Supplier Device Package
SOT-23-3
Voltage - Breakdown (V(BR)GSS)
-
Drain to Source Voltage (Vdss)
30 V
Grade
-
FET Type
N-Channel
Mounting Type
Surface Mount
Overview

DESCRIPTION

· The IF170x series are N-Channel JFETs designed for mid-frequency sensitive amplifier stages.

· Available in various configurations including through-hole, surface mount, and bare die packages.

· Custom ordering options for higher breakdown voltage parts and dual matched options like IF389x.



FEATURES

· Features InterFET N0132L geometry for optimized performance.

· Low noise of 1.0 nV/√Hz and high gain of 22mS typical.

· Low gate leakage current of 750fA at 10V.

· High radiation tolerance and compliance with RoHS, REACH, and CMR standards.

· Available in SMT, TH, and bare die package options with custom test and binning.

· Includes edge case SPICE modeling and industry standard crosses.



APPLICATIONS

· General: Used in amplifiers, switches, voltage regulators, oscillators, signal mixers, and noise generators.

· Military/Aero: Suitable for radar, communications, satellites, missile guidance, and hydrophone preamplifiers.

· Medical: Applied in medical imaging systems, monitors, recorders, and ultrasound equipment.

· Audio: Utilized in tone control circuits, headphone amplifiers, audio filters, and electret microphones.



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