Name: IRF1010ESTRLPBF
Brand: Infineon Technologies
SKU: JM-IRF1010ESTRLPBF
Availability: InStock

Infineon Technologies IRF1010ESTRLPBF

View All Single FETs, MOSFETs by Infineon Technologies

Part Number:
IRF1010ESTRLPBF
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
RoHs:
RoHS Compliant
Datasheet:
IRF1010ESTRLPBF_Datesheet
Description:
MOSFET N-CH 60V 84A D2PAK
In stock 2,707

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Specifications

Type

Paramete

Type

Paramete

Vgs(th) (Max) @ Id

4V @ 250µA

Drain to Source Voltage (Vdss)

60 V

Gate Charge (Qg) (Max) @ Vgs

130 nC @ 10 V

Qualification

Vgs (Max)

±20V

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Input Capacitance (Ciss) (Max) @ Vds

3210 pF @ 25 V

Technology

MOSFET (Metal Oxide)

Power Dissipation (Max)

200W (Tc)

Rds On (Max) @ Id, Vgs

12mOhm @ 50A, 10V

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Current - Continuous Drain (Id) @ 25°C

84A (Tc)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

FET Feature

Overview

DESCRIPTION

· Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques for low on-resistance per silicon area.
· Known for fast switching speed and ruggedized device design, offering efficiency and reliability.
· D2Pak surface mount power package accommodates die sizes up to HEX-4, providing high power capability and low on-resistance.
· Suitable for high current applications with low internal connection resistance, dissipating up to 2.0W in typical surface mount applications.
· Through-hole version (IRF1010EL) available for low-profile applications.

FEATURES

· Advanced Process Technology ensures high performance.
· Surface Mount (IRF1010ES) and Low-profile through-hole (IRF1010EL) options.
· Operates at temperatures up to 175°C.
· Features fast switching capabilities.
· Fully Avalanche Rated for enhanced durability.
· Lead-Free design for environmental compliance.

APPLICATIONS

· Suitable for a wide variety of high-efficiency and reliable applications.
· Ideal for high current applications due to low internal connection resistance.
· Effective in surface mount and low-profile through-hole configurations.

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