IRF135B203 Model Information

Product Overview

The IRF135B203 is a HEXFET® Power MOSFET designed for high-voltage, high-current applications. It features improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche SOA, enhanced body diode dV/dt and dI/dt capability, and is lead-free, RoHS compliant, and halogen-free.

Features

• Drain-to-Source Voltage (VDSS): 135 V
• Typical On-Resistance (RDS(on)): 6.7 mΩ
• Maximum On-Resistance (RDS(on)): 8.4 mΩ
• Continuous Drain Current (ID): 129 A (Silicon Limited)
• Package Types: TO-220AB, D2-Pak

Applications

• Brushed Motor Drive Applications
• BLDC Motor Drive Applications
• Battery Powered Circuits
• Half-Bridge and Full-Bridge Topologies
• Synchronous Rectifier Applications
• Resonant Mode Power Supplies
• OR-ing and Redundant Power Switches
• DC/DC and AC/DC Converters
• DC/AC Inverters

Pin Configuration

• TO-220AB:Pin 1: Drain (D)Pin 2: Source (S)Pin 3: Gate (G)
• D2-Pak:Pin 1: Drain (D)Pin 2: Source (S)Pin 3: Gate (G)

Electrical Characteristics (TJ = 25°C)

• Drain-to-Source Breakdown Voltage (V(BR)DSS): 135 V
• Breakdown Voltage Temp. Coefficient (ΔV(BR)DSS/ΔTJ): 0.14 V/°C
• Static Drain-to-Source On-Resistance (RDS(on)): 6.7 mΩ to 8.4 mΩ (VGS = 10V, ID = 77A)
• Gate Threshold Voltage (VGS(th)): 2.0 V to 4.0 V (VDS = VGS, ID = 250µA)
• Drain-to-Source Leakage Current (IDSS): 20 µA (VDS = 135V, VGS = 0V)
• Gate-to-Source Forward Leakage (IGSS): 100 nA (VGS = 20V)
• Gate Resistance (RG): 2.1 Ω

Dynamic Electrical Characteristics (TJ = 25°C)

• Forward Transconductance (gfs): 200 S
• Total Gate Charge (Qg): 180 nC to 270 nC
• Gate-to-Source Charge (Qgs): 43 nC
• Gate-to-Drain Charge (Qgd): 46 nC
• Turn-On Delay Time (td(on)): 18 ns
• Rise Time (tr): 73 ns
• Turn-Off Delay Time (td(off)): 114 ns
• Fall Time (tf): 81 ns
• Input Capacitance (Ciss): 9700 pF
• Output Capacitance (Coss): 540 pF
• Reverse Transfer Capacitance (Crss): 250 pF

Diode Characteristics

• Continuous Source Current (IS): 129 A
• Pulsed Source Current (ISM): 512 A
• Diode Forward Voltage (VSD): 1.3 V (TJ = 25°C, IS = 77A, VGS = 0V)
• Reverse Recovery Time (trr): 80 ns (TJ = 25°C, VDD = 115V)
• Reverse Recovery Charge (Qrr): 270 nC (TJ = 25°C, di/dt = 100A/µs)
• Reverse Recovery Current (IRRM): 6.0 A (TJ = 25°C)
• Peak Diode Recovery dv/dt: 4.0 V/ns (TJ = 175°C, IS = 77A, VDS = 135V)

Thermal Characteristics

• Thermal Resistance (RθJC): 0.34 °C/W
• Thermal Resistance (RθCS): 0.50 °C/W
• Thermal Resistance (RθJA): 62 °C/W

Absolute Maximum Ratings

• Continuous Drain Current (ID): 129 A (TC = 25°C, VGS = 10V)
• Pulsed Drain Current (IDM): 512 A
• Maximum Power Dissipation (PD): 441 W (TC = 25°C)
• Linear Derating Factor: 2.9 W/°C
• Gate-to-Source Voltage (VGS): ±20 V
• Operating Junction and Storage Temperature Range (TJ, TSTG): -55°C to +175°C
• Soldering Temperature: 300°C (for 10 seconds, 1.6mm from case)
• Mounting Torque: 10 lbf·in (1.1 N·m)

Ordering Information

• Base Part Number: IRF135B203
• Package Type: TO-220AB
• Standard Pack: Tube
• Quantity: 50
• Orderable Part Number: IRF135B203
• StrongIRFET™: IRF135B203