Name: IRF3205PBF
Brand: Infineon Technologies
SKU: JM-IRF3205PBF
Availability: InStock

Infineon Technologies IRF3205PBF

View All Single FETs, MOSFETs by Infineon Technologies

Part Number:
IRF3205PBF
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
RoHs:
RoHS Compliant
Datasheet:
IRF3205PBF_Datesheet
Description:
MOSFET N-CH 55V 110A TO220AB
In stock 22,385

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Specifications

Type

Paramete

Type

Paramete

Drain to Source Voltage (Vdss)

55 V

Operating Temperature

-55°C ~ 175°C (TJ)

Qualification

Grade

Supplier Device Package

TO-220AB

FET Feature

Drive Voltage (Max Rds On, Min Rds On)

10V

Gate Charge (Qg) (Max) @ Vgs

146 nC @ 10 V

Power Dissipation (Max)

200W (Tc)

Vgs(th) (Max) @ Id

4V @ 250µA

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3247 pF @ 25 V

FET Type

N-Channel

Mounting Type

Through Hole

Package / Case

TO-220-3

Rds On (Max) @ Id, Vgs

8mOhm @ 62A, 10V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Vgs (Max)

±20V

Overview

DESCRIPTION

· Advanced HEXFET® Power MOSFETs by International Rectifier, optimized for efficiency and reliability.

· Features ultra-low on-resistance and fast switching speeds, ideal for diverse applications.

· TO-220 package preferred for commercial-industrial uses up to 50 watts, known for low thermal resistance and cost-effectiveness.

FEATURES

· Utilizes advanced process technology for enhanced performance.

· Ultra low on-resistance and high dynamic dv/dt rating.

· Operates up to 175°C, with fast switching and full avalanche rating.

· Lead-free design, compliant with environmental standards.

APPLICATIONS

· Suitable for a wide range of power management tasks in commercial and industrial settings.

· Ideal for applications requiring efficient power dissipation and robust device performance.

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