Infineon Technologies IRF3205Z

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  • Part Number:

    IRF3205Z

  • Manufacturer:

    Infineon Technologies

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf IRF3205Z_Datesheet

  • Description:

    MOSFET N-CH 55V 75A TO220AB

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
6.5mOhm @ 66A, 10V
Package / Case
TO-220-3
Power Dissipation (Max)
170W (Tc)
Grade
-
Qualification
-
Mounting Type
Through Hole
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
3450 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drain to Source Voltage (Vdss)
55 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
TO-220AB
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
FET Type
N-Channel
Overview

DESCRIPTION

· Specifically designed for Automotive applications

· Utilizes the latest processing techniques for extremely low on-resistance per silicon area

· Features a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating



FEATURES

· Advanced Process Technology

· Ultra Low On-Resistance

· 175°C Operating Temperature

· Fast Switching

· Repetitive Avalanche Allowed up to Tjmax



APPLICATIONS

· Automotive applications

· Wide variety of other applications

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Shipping Rate

We ship orders once a day around 5 p.m., except Sunday. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

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Shipping Methods

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