Infineon Technologies IRFR3709ZTRLPBF


- Part Number:
IRFR3709ZTRLPBF
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant
- Datasheet:
IRFR3709ZTRLPBF_Datesheet
- Description:
MOSFET N-CH 30V 86A DPAK
- In stock 5,908
IRFR3709ZTRLPBF - HEXFET Power MOSFET
Overview
The IRFR3709ZTRLPBF is a HEXFET Power MOSFET designed for high-frequency synchronous buck converters in computer processor power applications and high-frequency isolated DC-DC converters for telecom and industrial use. It features a very low RDS(on) at 4.5V VGS and is lead-free.
Key Specifications
- Part Number: IRFR3709ZTRLPBF
- Package: I-Pak
- Configuration: N-Channel HEXFET Power MOSFET
Absolute Maximum Ratings
- Drain-to-Source Voltage (VDS): 30 V
- Gate-to-Source Voltage (VGS): ±20 V
- Continuous Drain Current (ID) @ TC = 25°C, VGS @ 10V: 39 A
- Continuous Drain Current (ID) @ TC = 100°C, VGS @ 10V: 34 A
- Pulsed Drain Current (IDM): 12 A
- Maximum Power Dissipation (PD) @ TC = 25°C: 300 W
- Maximum Power Dissipation (PD) @ TC = 100°C: 175 W
- Linear Derating Factor: 0.53 W/°C
- Operating Junction Temperature (TJ): -55°C to +175°C
- Storage Temperature Range (TSTG): -55°C to +175°C
- Soldering Temperature: 260°C for 10 seconds
Thermal Characteristics
- Thermal Resistance, Junction-to-Case (RθJC): 1.9°C/W
- Thermal Resistance, Junction-to-Ambient (RθJA):PCB Mount: 50°C/WFree Air: 110°C/W
Electrical Characteristics (TA = 25°C unless otherwise specified)
Static
- Drain-to-Source Breakdown Voltage (BVDSS): 30 V
- Static Drain-to-Source On-Resistance (RDS(on)):VGS = 4.5V: ≤ 6.5 mΩVGS = 10V: ≤ 5.2 mΩ
- Gate Threshold Voltage (VGS(th)): 1.35 to 2.25 V
- Drain-to-Source Leakage Current (IDSS): ≤ 1.0 µA
- Gate-to-Source Forward Leakage (IGSS): ≤ 100 nA
- Gate-to-Source Reverse Leakage: ≤ -100 nA
Switching
- Turn-On Delay Time (td(on)): ≤ 12 ns
- Rise Time (tr): ≤ 12 ns
- Turn-Off Delay Time (td(off)): ≤ 15 ns
- Fall Time (tf): ≤ 3.9 ns
Capacitance
- Input Capacitance (Ciss): ≤ 2330 pF
- Output Capacitance (Coss): ≤ 460 pF
- Reverse Transfer Capacitance (Crss): ≤ 230 pF
Diode Characteristics (Body Diode)
- Continuous Source Current (IS): 86 A
- Pulsed Source Current (ISM): 340 A
- Diode Forward Voltage (VSD): ≤ 1.0 V
- Reverse Recovery Time (trr): 29 to 44 ns
- Reverse Recovery Charge (Qrr): 25 to 37 nC
Avalanche Characteristics
- Single Pulse Avalanche Energy (EAS): 79 mJ
- Avalanche Current (IAR): 12 A
- Repetitive Avalanche Energy (EAR): 34 mJ
Ordering Information
- Part Number: IRFR3709ZTRLPBF
- Package: I-Pak
- Quantity: 3000 units / Tape and Reel
Applications
- High-Frequency Synchronous Buck Converters: Ideal for computer processor power applications.
- High-Frequency Isolated DC-DC Converters: Suitable for telecom and industrial use.
- Lead-Free: Compliant with lead-free requirements.
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Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies