Samsung K4B4G1646E-BCNB

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  • Part Number:

    K4B4G1646E-BCNB

  • Manufacturer:

    Samsung

  • Category:

    Memory

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

  • Description:

    DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 96-Pin FBGA

  • In stock 0
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Overview

K4B4G1646E-BCNB: 4Gb DDR3 SDRAM Memory Chip


1. Basic Information

ParameterDetails
ManufacturerSamsung Electronics
Part NumberK4B4G1646E-BCNB
Product TypeDDR3 SDRAM (Dynamic Random Access Memory)
Product StatusEnd of Life (EOL) – Discontinued
Introduction DateJune 22, 2015
RoHS ComplianceCompliant (EU RoHS 2011/65/EU, 2015/863)
ECCNEAR99

2. Core Specifications


2.1 Memory Density & Organization


  • Density: 4 Gigabits (Gb) = 512 Megabytes (MB)
  • Organization: 256 Megabits × 16 bits (256M x16)
  • Data Bus Width: 16-bit

2.2 Speed & Timing


  • Data Rate: 2133 Mbps (Megabits per second)
  • Clock Frequency: 1066 MHz (Double Data Rate)
  • Clock Period (tCK): 0.938 ns (typical for DDR3-2133)
  • Interface: SSTL_15 (1.5V Stub Series Terminated Logic)

2.3 Electrical Characteristics


  • Supply Voltage (VDD/VDDQ): 1.5 V (Operating range: 1.425 V – 1.575 V)
  • I/O Reference Voltage (VREFDQ): 0.49–0.51 × VDDQ
  • Operating Current (IDD):

2.4 Physical & Packaging


  • Package Type: 96-ball Fine-Pitch Ball Grid Array (FBGA)
  • Package Dimensions: 13.3 mm × 7.5 mm × 1.1 mm (max)
  • Ball Pitch: 0.8 mm
  • Mounting Type: Surface Mount Technology (SMT)
  • Standard Packing: Tray (1120 units per tray)

2.5 Environmental


  • Operating Temperature Range (TOPER): 0°C to +95°C
  • Storage Temperature Range: -55°C to +125°C (Typical for semiconductor devices)

3. Key Features


  • High-Speed Operation: Supports up to DDR3-2133 speed grade.
  • Low Power Consumption: Optimized for 1.5V operation, suitable for energy-efficient designs.
  • High Density: 4Gb capacity in a compact FBGA package.
  • Standard DDR3 Interface: Compatible with industry-standard DDR3 memory controllers.
  • Auto-Refresh & Self-Refresh Modes: For data retention in low-power states.
  • Burst Length (BL): Supports BL8 (8-word burst) and BC4 (4-word burst) modes.
  • CAS Latency (CL): Programmable (CL=7, 8, 9, 10, 11 for different speed grades).

4. Typical Applications


  • Consumer Electronics: Desktop PCs, laptops, servers, workstations.
  • Networking Equipment: Routers, switches, network attached storage (NAS).
  • Embedded Systems: Industrial controllers, medical devices, automotive infotainment systems.
  • Digital TVs & Set-Top Boxes: High-performance multimedia processing.

5. Ordering & Availability


  • Status: Discontinued (EOL). Limited stock may be available through authorized distributors.
  • MOQ (Minimum Order Quantity): 1 unit (varies by supplier)
  • Lead Time: Contact suppliers for current availability.

6. Notes


  • This product is no longer recommended for new designs. Consider newer DDR4/LPDDR5 memory solutions.
  • For complete electrical characteristics, timing diagrams, and application circuits, refer to the official Samsung datasheet.


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