MT40A1G8SA-075:E DDR4 SDRAM – Complete Datasheet Summary

1. Basic Identification

• Part Number: MT40A1G8SA-075:E
• Manufacturer: Micron Technology
• Device Type: DDR4 SDRAM (JEDEC JESD-79-4 compliant)
• Status: Obsolete (no longer manufactured)
• Density: 8Gb
• Organization: 1Gb × 8 (1G x8)
• Speed Grade: -075
• Cycle Time: 0.750 ns
• Data Rate: DDR4–2666 (2666 MT/s)
• CAS Latency (CL): 19
• Key Timing: CL–tRCD–tRP = 19–19–19; CL = 14.25 ns, tRCD = 14.25 ns, tRP = 14.25 ns

2. Electrical Specifications

• Core Voltage (VDD): 1.2 V ± 60 mV
• I/O Voltage (VDDQ): 1.2 V ± 60 mV
• DRAM Activating Voltage (VPP): 2.5 V (−125 mV, +250 mV)
• I/O Type: 1.2 V pseudo open–drain
• On–die VREFDQ Generation: Internal, adjustable reference for DQ inputs
• Reference Voltage (VREFCA): For command/address inputs

3. Architecture & Bank Configuration

• Bank Groups: 4 bank groups
• Banks: 16 internal banks (4 banks per group)
• Prefetch Architecture: 8n–bit prefetch
• Row Addressing: 64K (A[15:0])
• Column Addressing: 1K (A[9:0])
• Page Size: 1KB per bank
• Burst Length: Fixed BL8, fixed BC4, or on–the–fly (OTF) BC4/BL8
• Burst Type: Sequential or interleaved

4. Operating Conditions

• Case Temperature (TC): Commercial grade, 0 °C to +95 °C
• Refresh Requirements:

5. Package Information

• Package: 78–ball FBGA (Pb–free, RoHS compliant)
• Package Code: SA
• Dimensions: 7.5 mm × 11 mm (Rev. E, H)
• FBGA Marking: D9VPP
• Mounting: Surface mount

6. Key Features

• Refresh Modes: Self refresh, low–power auto self refresh (LPASR), temperature–controlled refresh (TCR), fine granularity refresh, self refresh abort
• Signal Integrity: On–die termination (ODT: nominal, park, dynamic), output driver calibration, write leveling, data strobe preamble training
• Reliability: Command/Address (CA) parity, data bus write CRC, data bus inversion (DBI), sPPR & hPPR post–package repair
• Power Management: Maximum power saving mode, power–down modes (active & precharge)
• Control: Command/Address latency (CAL), per–DRAM addressability (PDA), multipurpose register (MPR) read/write, connectivity test mode

7. Mode Register Control

• MR0: CAS latency, burst length/type, DLL reset, write recovery
• MR1: DLL enable, output driver impedance, nominal ODT (RTT_NOM), write leveling enable
• MR2: CAS write latency (CWL), dynamic ODT (RTT_WR), write CRC, LPASR
• MR3: MPR mode, gear–down mode, fine granularity refresh, per–DRAM addressability
• MR4: Read/write preamble, TCR, maximum power saving mode, PPR
• MR5: Data bus inversion (DBI), data mask (DM), CA parity, error status
• MR6: tCCD_L programming, internal VREFDQ calibration

8. Pin & Functional Summary

• Clocks: Differential CK_t / CK_c
• Data: DQ[7:0], differential DQS_t / DQS_c
• Commands: CS_n, RAS_n/A16, CAS_n/A15, WE_n/A14, ACT_n, CKE, ODT, RESET_n
• Addresses: BG[1:0], BA[1:0], A[15:0], A10/AP, A12/BC_n
• Reference: ZQ (calibration), VREFCA, VREFDQ
• Alert: ALERT_n (parity/CRC error indication)
• Power: VDD, VDDQ, VPP, VSS, VSSQ

9. Compliance & Standards

• JEDEC Standard: JESD–79–4
• RoHS: Compliant
• Package: Pb–free 78–ball FBGA