Complete Device Summary: MT41K256M16TW‑107:P

1. Basic Identification

• Part Number: MT41K256M16TW‑107:P
• Manufacturer: Micron Technology
• Device Type: 4Gb DDR3L SDRAM
• Organization: 256Meg × 16 × 8 banks (32Meg × 16 × 8 banks)
• Density: 4Gb (512MB)
• Data Width: ×16 (16‑bit I/O)
• Package: **96‑ball FBGA, 8mm × 14mm, Rev.P (TW) **Micron Technology
• Speed Grade: ‑107 (tCK = 1.07ns, CL=13, DDR3‑1866)Micron Technology
• Voltage: DDR3L 1.35V (VDD = VDDQ = 1.35V, 1.283V–1.45V)
• Compatibility: Backward compatible with 1.5V DDR3 (1.5V ±0.075V)Micron Technology
• Temperature Grade: Commercial (0°C ≤ TC ≤ +95°C)Micron Technology
• Revision: Die Rev.PMicron Technology

2. Key Features

• 8n‑bit prefetch architecture
• 8 internal banks
• Differential clock inputs (CK, CK#)
• Differential bidirectional data strobes (DQS, DQS#)
• Nominal & dynamic On‑Die Termination (ODT) for data, strobe, mask signals
• Programmable CAS Latency (CL), Additive Latency (AL), CAS Write Latency (CWL)
• Fixed Burst Length (BL8) and Burst Chop (BC4) via MRS; selectable OTF
• Self Refresh, Automatic Self Refresh (ASR), Self Refresh Temperature (SRT)
• Write leveling, Multipurpose Register (MPR), ZQ calibration
• Operating case temperature up to 105°C (automotive grade option available)Micron Technology

3. Speed & Timing Parameters (‑107)

• Data Rate: 1866 MT/s
• tCK (min): 1.07ns
• Timing set: 13‑13‑13 (tRCD‑tRP‑CL)
• tRCD: 13.91ns; tRP: 13.91ns; CL: 13.91nsMicron Technology
• Refresh:

4. Electrical Specifications

• Supply: VDD = VDDQ = 1.35V (1.283V–1.45V)
• Reference: VREFCA = VREFDQ = VDD/2
• I/O structure: Differential I/O for CK, DQS; single‑ended for address/command/data
• Driver impedance: 34Ω (default, RZQ/7) and optional 40Ω (RZQ/6)
• ODT RTT values: 20/30/40/60/120Ω programmable

5. Package & Physical

• Package: 96‑ball FBGA (TW)
• Dimensions: 8mm × 14mm
• Balls: 96‑ball FBGA, Rev.P
• Solder balls: SAC302 (96.8%Sn, 3%Ag, 0.2%Cu)
• Marking: FBGA abbreviated part marking (use Micron decoder)

6. Key Functions & Commands

• Activate, Read, Write, Precharge, Refresh
• Mode Register Set (MR0–MR3), ZQ Calibration Long/Short
• Self Refresh, Power Down (active & precharge)
• Reset, Write Leveling, Output Driver Calibration

7. Reliability & Absolute Maximum Ratings

• Storage temperature: ‑55°C to +150°C
• Operating case temp (commercial): 0°C to +95°C
• Voltage ratings: VDD/VDDQ/VIN/VOUT ‑0.4V to +1.975V
• ESD/ latch‑up protection per JEDEC standards

8. Target Applications

• Notebook, desktop, embedded systems
• Low‑power memory subsystems
• Industrial & consumer electronics requiring 1.35V low power
• Systems needing backward compatibility with 1.5V DDR3