Nexperia USA Inc. 74LVC1G14GW-Q100,1

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  • Part Number:

    74LVC1G14GW-Q100,1

  • Manufacturer:

    Nexperia USA Inc.

  • Category:

    Analog Front End (AFE)

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf 74LVC1G14GW-Q100,1_Datesheet

  • Description:

    IC INVERT SCHMITT 1CH 1IN 5TSSOP

  • In stock 18,066
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Specifications
Type
Paramete
Type
Paramete
Number of Inputs
1
Current - Output High, Low
32mA, 32mA
Max Propagation Delay @ V, Max CL
6.5ns @ 5V, 50pF
Operating Temperature
-40°C ~ 125°C (TA)
Supplier Device Package
5-TSSOP
Voltage - Supply
1.65V ~ 5.5V
Current - Quiescent (Max)
4 µA
Grade
Automotive
Mounting Type
Surface Mount
Qualification
AEC-Q100
Input Logic Level - Low
0.46V ~ 1.58V
Logic Type
Inverter
Number of Circuits
1
Package / Case
5-TSSOP, SC-70-5, SOT-353
Features
Schmitt Trigger
Input Logic Level - High
1.14V ~ 2.79V
Overview

74LVC1G14GW-Q100 Datasheet Summary

General Information

  • Manufacturer: Nexperia
  • Part Number: 74LVC1G14GW-Q100
  • Package Type: TSSOP5 (SOT353-1)
  • Temperature Range: -40°C to +125°C
  • Shipping Quantity: 5000 per Tape & Reel

Description

The 74LVC1G14GW-Q100 is a single Schmitt trigger inverter designed for automotive applications. It features a wide supply voltage range and is qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1). The device supports input voltages from 3.3V or 5V devices, making it suitable for mixed voltage environments. It also includes IOFF circuitry to prevent backflow current during power-down.

Features

  • Automotive Qualification: AEC-Q100 (Grade 1)
  • Wide Supply Voltage Range: 1.65V to 5.5V
  • Overvoltage Tolerant Inputs: Up to 5.5V
  • High Noise Immunity
  • CMOS Low Power Dissipation
  • IOFF Circuitry: Partial Power-down mode operation
  • Output Drive: ±24mA (VCC = 3.0V)
  • Latch-up Performance: Exceeds 250mA
  • Direct Interface with TTL Levels
  • Unlimited Rise and Fall Times
  • Compliance with JEDEC Standards:JESD8-7 (1.65V to 1.95V)JESD8-5 (2.3V to 2.7V)JESD8C (2.7V to 3.6V)JESD36 (4.5V to 5.5V)
  • ESD Protection:HBM: Exceeds 2000VCDM: Exceeds 1000V
  • Multiple Package Options

Applications

  • Wave and pulse shaper
  • Astable multivibrator
  • Monostable multivibrator

Ordering Information

  • Part Number: 74LVC1G14GW-Q100
  • Package: TSSOP5 (SOT353-1)
  • Temperature Range: -40°C to +125°C
  • Shipping Quantity: 5000 per Tape & Reel

Marking

  • Marking Code: VF

Pinning Information

TSSOP5 (SOT353-1) Pin Configuration

TableCopy


Pin No.SymbolDescription
1n.c.Not connected
2VCCSupply voltage
3AData input
4GNDGround (0V)
5YData output

Functional Description

  • Input to Output Logic:A = LOW (L) -> Y = HIGH (H)A = HIGH (H) -> Y = LOW (L)

Limiting Values

  • Supply Voltage (VCC): -0.5V to +6.5V
  • Input Voltage (VI): -0.5V to +6.5V
  • Output Voltage (VO): -0.5V to +6.5V
  • Input Clamping Current (IIK): ±50mA
  • Output Clamping Current (IOK): ±50mA
  • Output Current (IO): ±50mA
  • Supply Current (ICC): +100mA
  • Ground Current (IGND): -100mA
  • Storage Temperature (Tstg): -65°C to +150°C
  • Total Power Dissipation (Ptot): 250mW (derates linearly with temperature)

Recommended Operating Conditions

  • Supply Voltage (VCC): 1.65V to 5.5V
  • Input Voltage (VI): 0V to 5.5V
  • Output Voltage (VO): 0V to 5.5V
  • Ambient Temperature (Tamb): -40°C to +125°C

Static Characteristics

  • High-Level Output Voltage (VOH): VCC - 0.1V to VCC - 0.1V
  • Low-Level Output Voltage (VOL): 0.10V to 0.10V
  • Input Leakage Current (II): ±0.1μA to ±1μA
  • Power-Off Leakage Current (IOFF): ±0.1μA to ±2μA
  • Supply Current (ICC): 0.1μA to 4μA
  • Additional Supply Current (ΔICC): 5μA to 500μA
  • Input Capacitance (CI): 5.0pF

Dynamic Characteristics

  • Propagation Delay (tpd): 0.7ns to 14.0ns (depending on VCC)
  • Power Dissipation Capacitance (CPD): 15.4pF

Package Outline

TSSOP5 (SOT353-1) Dimensions

  • Length (A): 1.1mm to 1.3mm
  • Width (D): 2.2mm to 2.4mm
  • Height (E): 1.7mm to 1.8mm
  • Lead Length (Lp): 0.8mm to 1.0mm
  • Lead Width (w): 0.6mm to 0.8mm
  • Lead Thickness (v): 0.3mm to 0.5mm

Abbreviations

  • ANSI: American National Standards Institute
  • CDM: Charged Device Model
  • CMOS: Complementary Metal Oxide Semiconductor
  • DUT: Device Under Test
  • ESD: ElectroStatic Discharge
  • ESDA: ElectroStatic Discharge Association
  • HBM: Human Body Model
  • JEDEC: Joint Electron Device Engineering Council
  • TTL: Transistor-Transistor Logic


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