Micron e·MMC – MTFC8GAKAJCN‑1M WT Full Specification Summary

1. Basic Identification

• Manufacturer: Micron Technology Inc.
• Part Number: MTFC8GAKAJCN‑1M WT
• Product Type: Industrial‑grade embedded e·MMC nonvolatile memory
• Density: 8GB (64Gb)
• Memory Architecture: MLC NAND Flash + integrated MMC controller
• Compliance: JEDEC e·MMC 5.0 (JESD84‑B50)
• Document Version: Rev. F (06/2018)
• Status: Mass production

2. Key Features

• Advanced 12‑signal host interface
• Bus widths: ×1, ×4, ×8 I/O (host‑configurable)
• High‑speed modes: HS200, HS400, SDR/DDR up to 52 MHz
• Command support: Classes 0, 2, 4, 5, 6, 7
• Built‑in ECC and automatic block management
• Write protection: Permanent, power‑on, temporary
• Boot functions: High‑speed boot, boot partitions
• Security: RPMB, secure erase, secure trim
• Power management: Sleep mode, sleep notification, power‑off notification
• Others: HPI, BKOPS, FFU, device health report, cache, context ID, data tagging

3. Electrical Specifications

• VCC (NAND Flash & I/O): 2.7–3.6 V
• VCCQ (controller & e·MMC I/O, dual range): 1.70–1.95 V; 2.7–3.6 V
• Absolute Maximum Ratings:
• Operating Temperature (industrial): −40°C to +85°C
• Storage Temperature: −40°C to +85°C

4. Package & Mechanical

• Package: 153‑ball VFBGA (code CN)
• Dimensions: 11.5 mm × 13.0 mm × 1.0 mm
• Solder balls: 153× Ø0.319 mm (post‑reflow on Ø0.30 SMD pads)
• Mounting: Surface mount
• Shipping: Tape and reel (suffix WT)
• RoHS compliant, lead‑free “green package”

5. Performance (×8 I/O, 25°C, 1 MB sequential access)

HS400

• Sequential Read: 230 MB/s
• Sequential Write: 22 MB/s

HS200

• Sequential Read: 175 MB/s
• Sequential Write: 22 MB/s

DDR 52

• Sequential Read: 90 MB/s
• Sequential Write: 20 MB/s

6. Typical Current Consumption (VCC=3.6 V, VCCQ=1.95 V, 25°C)

• HS400 Write: 40 mA / 70 mA (ICC / ICCQ)
• HS400 Read: 50 mA / 100 mA
• HS200 Write: 40 mA / 70 mA
• HS200 Read: 50 mA / 100 mA
• DDR52 Write: 30 mA / 60 mA
• DDR52 Read: 20 mA / 70 mA
• Sleep: 0 µA / 200 µA
• Auto‑Standby: 35 µA / 230 µA

7. Signal & Pin Summary

• Core signals: CLK, RST_n, CMD, DAT[7:0], DS
• Power: VCC, VCCQ, VSS, VSSQ, VDDIM
• VDDIM: Internal voltage node; requires 0.1–1 µF capacitor to GND
• Internal pull‑ups on DAT[7:1], disconnected in ×4 / ×8 mode

8. Register Overview

• OCR (32‑bit): Operating voltage profile and power status
• CID (128‑bit): Unique device identification
• CSD (128‑bit): Access parameters, timing, block lengths
• ECSD (512‑byte): Extended features, power classes, cache, security, health monitoring

9. Target Applications

• Industrial embedded systems
• Networking & infrastructure equipment
• Industrial computing, gateways, controllers
• Non‑automotive rugged storage