Infineon Technologies PTFB193408SVV1R250XTMA1


- Part Number:
PTFB193408SVV1R250XTMA1
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
PTFB193408SVV1R250XTMA1_Datesheet - Description:
RF MOSFET LDMOS 30V H-34275G-6
- In stock 0
DESCRIPTION
· The PTFB193408SV is a 340-watt symmetrical push-pull LDMOS FET designed for multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. It features input and output matching, high gain, and thermally-enhanced packages, manufactured using Infineon's advanced LDMOS process for excellent thermal performance and reliability.
FEATURES
· Broadband internal matching for input and output.
· Wide video bandwidth.
· Typical single-carrier WCDMA performance at 1990 MHz, 30 V: Output power = 100 W, Efficiency = 33%, Gain = 19.0 dB, PAR = 7.5 dB @ 0.01% CCDF, ACPR @ 5 MHz = –35 dBc.
· Increased negative gate-source voltage range for improved performance in Doherty amplifiers.
· Capable of handling 10:1 VSWR at 30 V, 340 W (CW) output power.
· Integrated ESD protection.
· Excellent thermal stability.
· RoHS-compliant.
APPLICATIONS
· Multi-standard cellular power amplifiers in the 1930 to 1990 MHz frequency band.
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Infineon Technologies

Infineon Technologies
Infineon Technologies
Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







