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- Single, Pre-Biased Bipolar Transistors(558)
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2N7002K-7
N-Channel 60 V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
Diodes Incorporated
2N7002DW-7-F
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Diodes Incorporated
ADTA113ZUAQ-13
TRANS PREBIAS PNP 50V SOT323
Diodes Incorporated
ADTA113ZUAQ-7
TRANS PREBIAS NPN 50V SOT323
Diodes Incorporated
ADTA113ZCAQ-7
TRANS PREBIAS PNP 50V SOT23-3
Diodes Incorporated
ADC113TUQ-7
TRANS PREBIAS SOT363
Diodes Incorporated
ADA123JUQ-7
TRANS PREBIAS SOT363
Diodes Incorporated
DDTD143TU-7-F
TRANS PREBIAS NPN 50V SOT323
Diodes Incorporated
DDTD143TC-7-F
TRANS PREBIAS NPN 50V SOT23-3
Diodes Incorporated
DDTD143EU-7-F
TRANS PREBIAS NPN 50V SOT323
Diodes Incorporated
DDTD143EC-7-F
TRANS PREBIAS NPN 50V SOT23-3
Diodes Incorporated
DDTD123YU-7-F
TRANS PREBIAS NPN 50V SOT323
Diodes Incorporated
DDTD123EU-7-F
TRANS PREBIAS NPN 50V SOT323
Diodes Incorporated
DDTD122JC-7-F
TRANS PREBIAS NPN 50V SOT23-3
Diodes Incorporated
DDTD114TU-7-F
TRANS PREBIAS NPN 50V SOT323
Diodes Incorporated
DDTD114TC-7-F
TRANS PREBIAS NPN 50V SOT23-3
Diodes Incorporated
DDTD114GC-7-F
TRANS PREBIAS NPN 50V SOT23-3
Diodes Incorporated
DDTD114EU-7-F
TRANS PREBIAS NPN 50V SOT323
Diodes Incorporated
DDTD113EU-7-F
TRANS PREBIAS NPN 50V SOT323
Diodes Incorporated
DDTC144WKA-7-F
TRANS PREBIAS NPN 50V SC59-3
Diodes Incorporated
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What are Pre-biased bipolar transistors?
Pre-biased bipolar transistors include internal resistors that keep the device close to its bias or operating point when no input signal is present. This biasing enables the transistor to function more efficiently and generate a stable, undistorted output signal. Additionally, pre-biased transistors minimize the need for external circuit components, leading to lower project costs.
- Manufacturers
- Stocking Options
- Environmental Options
- Rds On (Max) @ Id, Vgs
- Switching Energy
- Supplier Device Package
- Structure
- Speed
- SCR Type
- Reverse Recovery Time (trr)
- Resistor - Emitter Base (R2)
- Resistor - Base (R1)
- Resistance @ If, F
- Resistance - RDS(On)
- Td (on/off) @ 25°C
- Qualification
- Power Dissipation (Max)
- Power - Output
- Power - Max
- Package / Case
- Operating Temperature - Junction
- Operating Temperature
- Number of SCRs, Diodes
- NTC Thermistor
- Noise Figure
- Voltage - Collector Emitter Breakdown (Max)
- Voltage - Zener (Nom) (Vz)
- Voltage - Test
- Voltage - Rated
- Voltage - Peak Reverse (Max)
- Voltage - On State (Vtm) (Max)
- Voltage - Off State
- Voltage - Gate Trigger (Vgt) (Max)
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Voltage - Cutoff (VGS off) @ Id
- Mounting Type
- Voltage - Breakover
- Voltage - Breakdown (V(BR)GSS)
- Vgs(th) (Max) @ Id
- Vgs (Max)
- Vce(on) (Max) @ Vge, Ic
- Vce Saturation (Max) @ Ib, Ic
- Transistor Type
- Tolerance
- Test Condition
- Technology
- Current - Gate Trigger (Igt) (Max)
- Current Drain (Id) - Max
- Current - Test
- Current - Reverse Leakage @ Vr
- Current - Peak Output
- Current - On State (It (RMS)) (Max)
- Current - On State (It (AV)) (Max)
- Current - Off State (Max)
- Current - Non Rep. Surge 50, 60Hz (Itsm)
- Current - Max
- Current - Hold (Ih) (Max)
- Current Rating (Amps)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Current - Continuous Drain (Id) @ 25°C
- Current - Collector Pulsed (Icm)
- Current - Collector Cutoff (Max)
- Current - Collector (Ic) (Max)
- Current - Breakover
- Current - Average Rectified (Io) (per Diode)
- Current - Average Rectified (Io)
- Configuration
- Capacitance @ Vr, F
- Gain
- Mfr
- Input Type
- Input Capacitance (Ciss) (Max) @ Vds
- Input Capacitance (Cies) @ Vce
- Input
- Impedance (Max) (Zzt)
- IGBT Type
- Grade
- Gate Charge (Qg) (Max) @ Vgs
- Gate Charge
- Base Product Number
- Frequency - Transition
- Frequency
- FET Type
- FET Feature
- Drive Voltage (Max Rds On, Min Rds On)
- Drain to Source Voltage (Vdss)
- Diode Type
- Diode Configuration
- DC Current Gain (hFE) (Min) @ Ic, Vce
