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- Single, Pre-Biased Bipolar Transistors(369)
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RN2105MFV,L3F
TRANS PREBIAS PNP 50V 0.1A VESM
Toshiba Semiconductor and Storage
RN2103MFV,L3F
TRANS PREBIAS PNP 50V 0.1A VESM
Toshiba Semiconductor and Storage
RN2104MFV,L3F
TRANS PREBIAS PNP 50V 0.1A VESM
Toshiba Semiconductor and Storage
RN1109MFV,L3F
TRANS PREBIAS NPN 50V 0.1A VESM
Toshiba Semiconductor and Storage
RN2107MFV,L3F
TRANS PREBIAS PNP 50V 0.1A VESM
Toshiba Semiconductor and Storage
RN2402S,LF(D
TRANS PREBIAS PNP 50V 0.1A SMINI
Toshiba Semiconductor and Storage
RN1406S,LF(D
TRANS PREBIAS NPN 50V 0.1A SMINI
Toshiba Semiconductor and Storage
RN2107ACT(TPL3)
TRANS PREBIAS PNP 50V 0.08A CST3
Toshiba Semiconductor and Storage
RN2118(T5L,F,T)
TRANS PREBIAS PNP 50V 0.1A SSM
Toshiba Semiconductor and Storage
RN2106(T5L,F,T)
TRANS PREBIAS PNP 50V 0.1A SSM
Toshiba Semiconductor and Storage
RN2108ACT(TPL3)
TRANS PREBIAS PNP 50V 0.08A CST3
Toshiba Semiconductor and Storage
RN2104ACT(TPL3)
TRANS PREBIAS PNP 50V 0.08A CST3
Toshiba Semiconductor and Storage
RN2102ACT(TPL3)
TRANS PREBIAS PNP 50V 0.08A CST3
Toshiba Semiconductor and Storage
RN2101ACT(TPL3)
TRANS PREBIAS PNP 50V 0.08A CST3
Toshiba Semiconductor and Storage
RN1110(T5L,F,T)
TRANS PREBIAS NPN 50V 0.1A SSM
Toshiba Semiconductor and Storage
RN1111ACT(TPL3)
TRANS PREBIAS NPN 50V 0.08A CST3
Toshiba Semiconductor and Storage
RN1109ACT(TPL3)
TRANS PREBIAS NPN 50V 0.08A CST3
Toshiba Semiconductor and Storage
RN1108ACT(TPL3)
TRANS PREBIAS NPN 50V 0.08A CST3
Toshiba Semiconductor and Storage
RN1106ACT(TPL3)
TRANS PREBIAS NPN 50V 0.08A CST3
Toshiba Semiconductor and Storage
RN1105ACT(TPL3)
TRANS PREBIAS NPN 50V 0.08A CST3
Toshiba Semiconductor and Storage
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What are Pre-biased bipolar transistors?
Pre-biased bipolar transistors include internal resistors that keep the device close to its bias or operating point when no input signal is present. This biasing enables the transistor to function more efficiently and generate a stable, undistorted output signal. Additionally, pre-biased transistors minimize the need for external circuit components, leading to lower project costs.
- Manufacturers
- Stocking Options
- Environmental Options
- Regulator Current (Max)
- Td (on/off) @ 25°C
- Switching Energy
- Supplier Device Package
- Structure
- Speed
- SCR Type
- Reverse Recovery Time (trr)
- Resistor - Emitter Base (R2)
- Resistor - Base (R1)
- Resistance @ If, F
- Resistance - RDS(On)
- Technology
- Rds On (Max) @ Id, Vgs
- Qualification
- Q @ Vr, F
- Power Dissipation (Max)
- Power - Output
- Power - Max
- Package / Case
- Operating Temperature - Junction
- Operating Temperature
- Number of SCRs, Diodes
- NTC Thermistor
- Voltage - Collector Emitter Breakdown (Max)
- Voltage - Zener (Nom) (Vz)
- Voltage - Test
- Voltage - Rated
- Voltage - Peak Reverse (Max)
- Voltage - On State (Vtm) (Max)
- Voltage - Off State
- Voltage - Limiting (Max)
- Voltage - Gate Trigger (Vgt) (Max)
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Voltage - Cutoff (VGS off) @ Id
- Noise Figure
- Voltage - Breakover
- Voltage - Breakdown (V(BR)GSS)
- Voltage - Anode - Cathode (Vak)(Max)
- Vgs(th) (Max) @ Id
- Vgs (Max)
- Vce(on) (Max) @ Vge, Ic
- Vce Saturation (Max) @ Ib, Ic
- Transistor Type
- Tolerance
- Test Condition
- Current - Continuous Drain (Id) @ 25°C
- Current - Test
- Current - Reverse Leakage @ Vr
- Current - Peak Output
- Current - On State (It (RMS)) (Max)
- Current - On State (It (AV)) (Max)
- Current - Off State (Max)
- Current - Non Rep. Surge 50, 60Hz (Itsm)
- Current - Max
- Current - Hold (Ih) (Max)
- Current - Gate Trigger (Igt) (Max)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Current Drain (Id) - Max
- Current - Collector Pulsed (Icm)
- Current - Collector Cutoff (Max)
- Current - Collector (Ic) (Max)
- Current - Breakover
- Current - Average Rectified (Io) (per Diode)
- Current - Average Rectified (Io)
- Configuration
- Capacitance Ratio Condition
- Capacitance Ratio
- Capacitance @ Vr, F
- Base Product Number
- Gain
- Mounting Type
- Mfr
- Input Type
- Input Capacitance (Ciss) (Max) @ Vds
- Input Capacitance (Cies) @ Vce
- Input
- Impedance (Max) (Zzt)
- IGBT Type
- Grade
- Gate Charge (Qg) (Max) @ Vgs
- Gate Charge
- Applications
- Frequency - Transition
- Frequency
- FET Type
- FET Feature
- Drive Voltage (Max Rds On, Min Rds On)
- Drain to Source Voltage (Vdss)
- Diode Type
- Diode Configuration
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Current Rating (Amps)
