Name: 2N7000RLRPG
Brand: onsemi
SKU: JM-2N7000RLRPG
Availability: InStock

onsemi 2N7000RLRPG

View All Single FETs, MOSFETs by onsemi

Part Number:
2N7000RLRPG
Manufacturer:
onsemi
Category:
Single FETs, MOSFETs
RoHs:
Non-RoHS Compliant
Datasheet:
2N7000RLRPG_Datesheet
Description:
MOSFET N-CH 60V 200MA TO92-3
In stock 0

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Specifications

Type

Paramete

Type

Paramete

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

TO-92 (TO-226)

Vgs (Max)

±20V

Rds On (Max) @ Id, Vgs

5Ohm @ 500mA, 10V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

FET Feature

FET Type

N-Channel

Package / Case

TO-226-3, TO-92-3 Long Body (Formed Leads)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Grade

Vgs(th) (Max) @ Id

3V @ 1mA

Technology

MOSFET (Metal Oxide)

Power Dissipation (Max)

350mW (Tc)

Qualification

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

60 V

Input Capacitance (Ciss) (Max) @ Vds

60 pF @ 25 V

Overview

DESCRIPTION

· 2N7000 is a small signal N-Channel MOSFET with a drain current of 200 mAmps and a drain-source voltage of 60 Volts.

· It is available in a TO-92 package and is qualified for AEC and PPAP standards.

· Pb-Free packages are available for this device.

FEATURES

· AEC-Qualified and PPAP Capable.

· Offers a maximum drain-source voltage (VDSS) of 60 Vdc and a gate-source voltage (VGS) of ±20 Vdc.

· Continuous drain current (ID) of 200 mAdc and pulsed drain current (IDM) of 500 mAdc.

· Total power dissipation (PD) of 350 mW at 25°C, with a derating factor of 2.8 mW/°C above 25°C.

· Operating and storage temperature range from -55°C to +150°C.

APPLICATIONS

· Suitable for low power switching applications.

· Ideal for use in automotive and industrial environments due to its AEC qualification and PPAP capability.

· Can be used in various electronic circuits where a small signal MOSFET is required.

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