Toshiba Semiconductor and Storage 2SA1162-GR,LF

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Specifications
Type
Paramete
Type
Paramete
Package / Case
TO-236-3, SC-59, SOT-23-3
Frequency - Transition
80MHz
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Qualification
-
Supplier Device Package
S-Mini
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Operating Temperature
125°C (TJ)
Power - Max
150 mW
Voltage - Collector Emitter Breakdown (Max)
50 V
Current - Collector (Ic) (Max)
150 mA
Transistor Type
PNP
Grade
-
Mounting Type
Surface Mount
Overview

DESCRIPTION

· The document provides detailed specifications and operational guidelines for a specific electronic component or system.



FEATURES

· High efficiency and reliability in performance.
· Compact design suitable for space-constrained applications.
· Advanced safety features to prevent operational hazards.
· Compatibility with various industry standards and protocols.



APPLICATIONS

· Ideal for use in consumer electronics, automotive systems, and industrial machinery.
· Suitable for integration into smart home devices and IoT applications.
· Effective in power management and energy conservation systems.

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