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NXP A3V26S004NT6
- Part Number:
A3V26S004NT6
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- RoHs:
RoHS Compliant - Datasheet:
A3V26S004NT6_Datesheet - Description:
RF MOSFET LDMOS 48V 6DFN
- In stock 0
DESCRIPTION
· The A3V26S004N is a 26 dBm RF power LDMOS transistor designed for cellular base station applications, operating in the frequency range of 2496 to 2690 MHz.
· It features a typical single-carrier W-CDMA reference circuit performance with VDD=42V dc, IDQ=17mA, Pout=23.5 dBm Avg., and an input signal PAR of 9.9 dB at 0.01% probability on CCDF.
FEATURES
· Designed for low complexity analog or digital linearization systems.
· Universal broadband driver.
· Optimized for massive MIMO active antenna systems for 5G base stations.
APPLICATIONS
· Cellular base station applications.
· Massive MIMO active antenna systems for 5G base stations.
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