Texas Instruments AMC3330QDWERQ1


- Part Number:
AMC3330QDWERQ1
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
- Description:
Isolation IC 16-SOIC
- In stock 0
AMC3330QDWERQ1 Comprehensive Datasheet Summary
1. Basic Device Information
- Full Part Number: AMC3330QDWERQ1
- Device Family: AMC3330‑Q1 Automotive Precision Isolated Amplifier
- Status: Active, production data
- Document: SBASA35B (June 2020 – Revised September 2024)
- Automotive Qualification: AEC‑Q100 Grade 1
- Package: DWE (16‑pin SOIC), nominal size 10.3 mm × 10.3 mm
- Ordering & Packaging: SOIC 16‑pin, 2000 units per large tape‑and‑reel, RoHS compliant, lead finish NIPDAU, MSL Level‑3 260°C 168hr, operating temp −40°C to 125°C, marking AMC3330Q
2. Core Features
- Integrated Isolated DC/DC Converter: Single 3.3 V or 5 V low‑side supply operation
- Input: ±1 V linear full‑scale range (VFSR), ±1.25 V clipping range, high input impedance
- Fixed Gain: 2.0 V/V
- High Precision DC Errors (max):
- Robust Isolation:
- High CMTI: ≥85 kV/µs (min)
- System Diagnostics: Integrated DC/DC fault detection, open‑drain DIAG pin
- EMC Compliance: Meets CISPR‑11 and CISPR‑25
3. Key Applications
- Isolated voltage sensing in automotive systems:
4. Pin Configuration (16‑Pin SOIC Top View)
| Pin No. | Name | Type | Description |
|---|---|---|---|
| 1 | DCDC_OUT | Power | Isolated DC/DC high‑side output; connect to HLDO_IN |
| 2 | DCDC_HGND | Power GND | DC/DC high‑side ground; connect to HGND |
| 3 | HLDO_IN | Power | High‑side LDO input; connect to DCDC_OUT |
| 4 | NC | — | No internal connection |
| 5 | HLDO_OUT | Power | High‑side LDO output |
| 6 | INP | Analog Input | Non‑inverting analog input |
| 7 | INN | Analog Input | Inverting analog input; connect to HGND |
| 8 | HGND | Signal GND | High‑side analog ground |
| 9 | GND | Signal GND | Low‑side analog ground; connect to DCDC_GND |
| 10 | OUTN | Analog Output | Inverting analog output |
| 11 | OUTP | Analog Output | Non‑inverting analog output |
| 12 | VDD | Power | Low‑side supply (3.0–5.5 V) |
| 13 | LDO_OUT | Power | Low‑side LDO output; connect to DCDC_IN |
| 14 | DIAG | Digital Output | Active‑low open‑drain status indicator |
| 15 | DCDC_GND | Power GND | DC/DC low‑side ground; connect to GND |
| 16 | DCDC_IN | Power | Isolated DC/DC low‑side input; connect to LDO_OUT |
5. Absolute Maximum Ratings
- Supply voltage (VDD to GND): −0.3 V to 6.5 V
- Analog input (INP, INN): HGND −6 V to HLDO_OUT +0.5 V
- Analog output (OUTP, OUTN): GND −0.5 V to VDD +0.5 V
- Digital output (DIAG): GND −0.5 V to 6.5 V
- Input current (continuous): ±10 mA
- Junction temperature (TJ): 150 °C
- Storage temperature (Tstg): −65 °C to 150 °C
6. Recommended Operating Conditions
- Supply Voltage (VDD): 3.0 V to 5.5 V (nominal 3.3 V / 5 V)
- Linear Differential Input (VFSR): −1 V to +1 V
- Clipping Input (VClipping): ±1.25 V
- Common‑Mode Input (VCM): −1.4 V to 1.6 V (normal operation)
- Ambient Temperature (TA): −40 °C to +125 °C
- Output Load:
7. Isolation & Safety Specifications
- Clearance/creepage: ≥8 mm external
- Insulation distance (DTI): ≥21 µm (signal), ≥120 µm (power)
- CTI: ≥600 V, Material Group I
- VIORM: 1700 VPK; VIOWM: 1200 VRMS / 1700 VDC
- VIOTM: 6000 VPK (transient isolation)
- VIMP: 7700 VPK (impulse voltage)
- VIOSM: 10000 VPK (surge isolation)
- Isolation Capacitance (CIO): ~4.5 pF
- Isolation Resistance (RIO): >1012 Ω @25 °C
- Certifications:
8. Electrical Characteristics (TA = −40°C to 125°C, VDD = 3.0–5.5 V)
- Input:
- Output:
- Accuracy:
- Power:
9. Thermal Information
- Junction‑to‑ambient thermal resistance (RθJA): 73.5 °C/W
- Junction‑to‑top (RθJC(top)): 31 °C/W
- Junction‑to‑board (RθJB): 44 °C/W
- Max power dissipation: 236.5 mW @VDD = 5.5 V
- Safety limiting current (IS): 309 mA @VDD = 5.5 V, TA = 25 °C
10. Functional Description
- Signal Path: Second‑order ΔΣ modulator → capacitive isolation barrier → fourth‑order low‑pass filter → differential output
- Isolation Technology: Double SiO2 capacitive signal isolation; on‑chip transformer with thin‑film polymer power isolation
- OOK Modulation: 480 MHz carrier for robust barrier transmission
- Diagnostics & Failsafe:
- DC/DC Converter: Spread‑spectrum clocking for low EMI; internal low‑side/high‑side LDO regulation
11. Application & Implementation
- Typical Use: High‑voltage isolated sensing via resistive dividers in OBC, inverters, BMS
- Input Filtering: RC low‑pass recommended; single capacitor often sufficient for divider front‑ends
- Output Interface: Differential output; convert to single‑ended for single‑ended ADCs using op‑amp circuits
- Power Supply Decoupling:
- Layout Guidelines: Symmetrical input/output paths; keep decoupling caps close; maintain ≥8 mm creepage/clearance; separate high‑side/low‑side grounds
12. Ordering & Packaging Details
- Orderable Part: AMC3330QDWERQ1, AMC3330QDWERQ1.A
- Package: 16‑pin SOIC (DWE), tape‑and‑reel
- Dimensions: Reel diameter 330.0 mm, width 16.4 mm; tape pitch 12.0 mm
- Marking: AMC3330Q
- MSL: Level 3, peak reflow 260 °C
13. Revision Highlights (SBASA35B, Sep 2024)
- Updated isolation certification to DIN EN IEC 60747‑17 (VDE 0884‑17)
- Extended DIAG pin max voltage to 6.5 V
- Added output load capacitance/resistance specs
- Updated barrier capacitance to 4.5 pF
- Added DIAG electrical specs, VDD UV/POR thresholds, IH for 4.5–5.5 V
- Improved layout and decoupling recommendations
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