DESCRIPTION

· The bq4010/Y/LY is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits.

· It integrates control circuitry and a lithium energy source for reliable nonvolatility.

· The device operates with unlimited write cycles similar to standard SRAM.

· It automatically write-protects during power-up/power-down cycles and isolates the battery before power application.

· Compatible with industry-standard 28-pin DIP pinout and operates at 5V or 3.3V.

FEATURES

· Data retention for at least 10 years without power.

· Internal isolation of battery before power application.

· Automatic write-protection during power-up/power-down cycles.

· Conventional SRAM operation with unlimited write cycles.

· Low standby current CMOS SRAMs with small lithium coin cells.

APPLICATIONS

· Suitable for applications requiring nonvolatile memory with fast write-cycle times.

· Ideal for systems needing reliable data retention during power interruptions.

· Compatible with standard 64-Kb SRAM pinout for easy integration.